Abstract
The effect of dislocation on the 1/f noise current in long-wavelength infrared (LWIR) reverse biased HgCdTe photodiodes working at liquid nitrogen (LN) temperature was analyzed theoretically by using a phenomenological model of dislocations as an additional Shockley–Read–Hall (SRH) generation–recombination (G–R) channel in heterostructure. Numerical analysis was involved to solve the set of transport equations in order to find a steady state values of physical parameters of the heterostructure. Next, the set of transport equations for fluctuations (TEFF) was formulated and solved to obtain the spectral densities (SD) of the fluctuations of electrical potential, quasi-Fermi levels, and temperature. The SD of mobility fluctuations, shot G–R noise, and thermal noise were also taken into account in TEFF. Additional expressions for SD of 1/f fluctuations of the G–R processes were derived. Numerical values of the SD of noise current were compared with the experimental results of Johnson et al. Theoretical analysis has shown that the dislocations increase the G–R processes and this way cause the growth of G–R dark current. Despite the fact that dislocations increase both shot G–R noise and 1/f G–R noise, the main cause of 1/f current noise in LN cooled LWIR photodiodes are fluctuations of the carriers mobility determined by 1/f fluctuations of relaxation times. As the noise current is proportional to the total diode current, growth of G–R dark current caused by dislocations leads to the growth of noise current.
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References
P.W. Kruse, L.D. McGlauchlin, and R.B. McQuistan, Elements of Infrared Technology, Chapter 9 (New York: Wiley, 1962).
P.W. Kruse, Optical and Infrared Detectors, ed. R.J. Keyes (Berlin: Springer, 1977), pp. 5–69
R.W. Boyd, Radiometry and the Detection of Optical Radiation, Chapter 8 (New York: Wiley, 1983).
A. van der Ziel, Fluctuation Phenomena in Semiconductors (London: Butterworths Scientific, 1959).
D. Long, Infrared Phys. 7, 169 (1967).
C.T. Elliott, Handbook on Semiconductors, ed C. Hilsum, (Amsterdam: Nord Holland, 1982), pp. 727–798
Cataloque of Infrared Detectors, (Vigo System SA: Ozarow Mazowiecki)
T. Ashley and C.T. Elliott, Electron. Lett. 21, 451 (1985).
T. Ashley, C.T. Elliott, and A.T. Harker, Infrared Phys. 26, 303 (1986).
T. Ashley, C.T. Elliott, and A.M. White, Proc. SPIE 572, 123 (1985).
C.T. Elliott, Semicond. Sci. Technol. 5, S30 (1990).
S.H. Shin, J.M. Arias, D.D. Edwall, M. Zandian, J.G. Pasko, and R.E. DeWames, J. Vac. Sci. Technol. A 7, 503 (1989).
S.M. Johnson, D.R. Rhiger, J.P. Rosbeck, J.M. Peterson, S.M. Taylor, and M.E. Boyd, J. Vac. Sci. Technol. B 10, 1499 (1992).
A. Rogalski, K. Adamiec, and J. Rutkowski, Narrow-Gap Semiconductor Photodiodes (Bellingham: SPIE Press, 2000).
K. Jóźwikowski and A. Rogalski, J. Electron. Mater. 29, 736 (2000).
K. Jóźwikowski, A. Jóźwikowska, M. Kopytko, A. Rogalski, and L.R. Jaroszewicz, Infrared Phys. Technol. 55, 98 (2012).
S. Murakami, H. Nishino, H. Ebe, and Y. NishiJima, J. Electron. Mater. 24, 1143 (1995).
A. van der Ziel, Noise (New York: Prentice Hall, 1954).
D.T. Kleinpenning, J. Vac. Technol. A3, 176 (1985).
A.L. McWhorter, Semiconductor Surface Physics, ed. R.H. Kingston (Philadelphia: University of Pennsilvania, PA, 1975)
N.F. Hooge, Phys. Lett. 29A, 123 (1969).
P.H. Handel, Phys. Rev. Lett. 34, 1492 (1975).
P.H. Handel, Phys. Rev. A 22, 745 (1980).
A. van der Ziel, J. Appl. Phys. 63, 2456 (1988).
K. Jóźwikowski, J. Appl. Phys. 90, 1318 (2001).
K. Jóźwikowski, W. Gawron, J. Piotrowski, and A. Jóźwikowska, IEE Proc. Circuits Devices Syst. 150, 65 (2003).
K. Jóźwikowski, C.A. Musca, L. Faraone, and A. Jóźwikowska, Solid-State Electron. 48, 13 (2004).
B.R. Nag, Electron Transport in Compound Semiconductors, Chapter 2 (Berlin: Springer, 1980).
R.D.S. Yadawa, A.K. Gupta, and A.V.R. Warrier, J. Electron. Mater. 23, 1359 (1994).
D. Chattopadhyay and B.R. Nag, Phys. Rev. B 12, 5676 (1975).
G.S. Kousik, C.M. van Vliet, G. Bosman, and P.H. Handel, Adv. Phys. 34, 663 (1985).
R.G. Humpreys, Infrared Phys. 23, 171 (1983).
R.G. Humpreys, Infrared Phys. 26, 337 (1986).
K. Jóźwikowski, M. Kopytko, and A. Rogalski, J. Electron. Mater. 41, 2766 (2012).
M. Kaku, Quantum Field Theory: A Modern Introduction (New York: Oxfort University Press, 1993), pp. 177–184. appendix A6.
K. Jóźwikowski, M. Kopytko, A. Rogalski, and A. Jóźwikowska, J. Appl. Phys. 108, 074519 (2010).
K. Jóźwikowski, M. Kopytko, and A. Rogalski, J. Appl. Phys. 112, 033718 (2012).
A. van der Ziel and P.H. Handel, IEEE Trans on El. Dev. ED-32, 1802 (1985)
J.S. Blakemore, Semiconductor Statistic, Chapter 6 (Pergamon: Oxfort, 1962).
A.R. Beatie and P.T. Landsberg, Proc. R. Soc. Lond. Ser. A 249, 16 (1959).
F.N. Hooge, Phys. Lett. A 29, 139 (1969).
F.N. Hooge, Physica 83, 19 (1976).
W. van Roosbroeck and W. Shockley, Phys. Rev. 94, 1558 (1954).
W. Shockley and W.T. Read, Phys. Rev. 87, 835 (1952).
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Jóźwikowski, K., Jóźwikowska, A. & Martyniuk, A. Dislocations as a Noise Source in LWIR HgCdTe Photodiodes. J. Electron. Mater. 45, 4769–4781 (2016). https://doi.org/10.1007/s11664-016-4390-z
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DOI: https://doi.org/10.1007/s11664-016-4390-z