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Journal of Electronic Materials

, Volume 45, Issue 4, pp 2133–2141 | Cite as

Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%

  • Sattar Al-KabiEmail author
  • Seyed  Amir Ghetmiri
  • Joe Margetis
  • Wei Du
  • Aboozar Mosleh
  • Murtadha Alher
  • Wei Dou
  • Joshua  M. Grant
  • Greg Sun
  • Richard A. Soref
  • John Tolle
  • Baohua Li
  • Mansour Mortazavi
  • Hameed A. Naseem
  • Shui-Qing Yu
Article

Abstract

Optical properties of germanium tin (Ge1−x Sn x ) alloys have been comprehensively studied with Sn compositions from 0 (Ge) to 12%. Raman spectra of the GeSn samples with various Sn compositions were measured. The room temperature photoluminescence (PL) spectra show a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Temperature dependent PL shows the PL intensity variation along with the temperature change, which reveals the indirectness or directness of the bandgap of the material. As temperature decreases, the PL intensity decreases with Sn composition less than 8%, indicating the indirect bandgap Ge1−x Sn x ; while the PL intensity increases with Sn composition higher than 10%, implying the direct bandgap Ge1−x Sn x . Moreover, the PL study of n-doped samples shows bandgap narrowing compared to the unintentionally (Boron) doped thin film with similar Sn compositions due to the doping.

Keywords

GeSn alloy n- doped GeSn Raman spectroscopy photoluminescence 

Notes

Acknowledgements

The work in UA is supported by the National Science Foundation (NSF) under EPS-1003970, Defense Advanced Research Projects Agency (DARPA) under W911NF-13-1-0196,the Arktonics, LLC (Air Force SBIR) under FA9550-14-C-0044 and Air Force Office of Scientific Research (AFOSR) under FA9550-14-1-0205. Drs. R. A. Soref and G. Sun acknowledge support from AFOSR under FA9550-14-1-0196.

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Copyright information

© The Minerals, Metals & Materials Society 2015

Authors and Affiliations

  • Sattar Al-Kabi
    • 1
    • 2
    • 3
    Email author
  • Seyed  Amir Ghetmiri
    • 1
    • 2
  • Joe Margetis
    • 4
  • Wei Du
    • 2
  • Aboozar Mosleh
    • 1
    • 2
  • Murtadha Alher
    • 2
    • 5
  • Wei Dou
    • 2
  • Joshua  M. Grant
    • 1
    • 2
  • Greg Sun
    • 6
  • Richard A. Soref
    • 6
  • John Tolle
    • 4
  • Baohua Li
    • 7
  • Mansour Mortazavi
    • 8
  • Hameed A. Naseem
    • 2
  • Shui-Qing Yu
    • 2
  1. 1.MicroElectronics-Photonics ProgramUniversity of ArkansasFayettevilleUSA
  2. 2.Department of Electrical EngineeringUniversity of ArkansasFayettevilleUSA
  3. 3.Department of PhysicsWasit UniversityKutIraq
  4. 4.ASMPhoenixUSA
  5. 5.Mechanical Engineering DepartmentUniversity of KerbalaKarbalaIraq
  6. 6.Department of EngineeringUniversity of Massachusetts BostonBostonUSA
  7. 7.Arktonics, LLCFayettevilleUSA
  8. 8.Department of Chemistry & PhysicsUniversity of Arkansas at Pine BluffPine BluffUSA

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