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Enhanced Room Temperature Ferromagnetism by Fe Doping in Zn0.96Cu0.04O Diluted Magnetic Semiconductors

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Abstract

Zn0.96−x Cu0.04Fe x O (0 ≤ x ≤ 0.04) nanoparticles synthesized via the sol–gel technique had a hexagonal wurtzite ZnO structure without any Fe/Cu-related secondary phases. The crystallite size was reduced from Fe = 0% (23 nm) to Fe = 4% (16 nm) due to the suppression of grain surface growth by foreign impurities. Doping of higher Fe concentrations into Zn-Cu-O suppressed the ultra-violet (UV) emission band and balanced the defect-related visible emissions. The decrease of the UV and green emission intensity ratio (I UV/I green) and the UV and blue emission intensity ratio (I UV/I blue) in photoluminescence spectra implied an increase of defect states with the increase of Fe concentrations. All the samples showed clear room temperature ferromagnetism. The saturation magnetization was increased by Fe co-doping which was attributed to the interaction between Fe-Fe ions. X-ray photoelectron spectra confirmed the absence of secondary phases like Fe3O4.

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  1. PG and Research Department of Physics, Government Arts College, Melur, Madurai, Tamilnadu, 625106, India

    S. Muthukumaran & M. Ashokkumar

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  1. S. Muthukumaran
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  2. M. Ashokkumar
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Correspondence to S. Muthukumaran.

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Muthukumaran, S., Ashokkumar, M. Enhanced Room Temperature Ferromagnetism by Fe Doping in Zn0.96Cu0.04O Diluted Magnetic Semiconductors. J. Electron. Mater. 45, 976–982 (2016). https://doi.org/10.1007/s11664-015-4253-z

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  • DOI: https://doi.org/10.1007/s11664-015-4253-z

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