Abstract
The heterostructured thin films of the solar blind p-ZnO:LiNO3/i-MgZnO/n-MgZnO:In ultraviolet-B photodetectors were deposited at a low temperature using the vapor cooling condensation system. The photodetectors exhibited an absorption cut-off wavelength of 310 nm and did not response in the visible wavelength range. A low dark current of 20 pA and a high rejection ratio of 3.60 × 103 were measured when a reverse bias voltage of −1 V was applied. The associated photoresponsivity of 0.2 A/W, the noise equivalent power of 9.50 × 10−12 W and the specific detectivity of 3.16 × 1012 cm Hz1/2 W−1 were obtained. Furthermore, the dominant noise originated from the flicker noise.
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Acknowledgements
This work was supported from the Ministry of Science and Technology, Taiwan, under MOST-103-2221-E-006-002, the Advanced Optoelectronic Technology Center and the Research Center for Energy Technology and Strategy of the National Cheng Kung University.
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Lee, CT., Lin, TS. & Chen, CH. ZnO-Based Solar Blind Ultraviolet-B Photodetectors Using MgZnO Absorption Layer. J. Electron. Mater. 44, 4722–4725 (2015). https://doi.org/10.1007/s11664-015-4068-y
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DOI: https://doi.org/10.1007/s11664-015-4068-y