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Solid State Reaction and Operational Stability of Ruthenium Schottky Contact-on-6H-SiC Under Argon Annealing

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Abstract

Thin films of ruthenium-on-6-hexagonal silicon carbide (6H-SiC) were analysed by Rutherford backscattering spectroscopy (RBS) at various annealing temperatures. Some thin film samples were also analysed by scanning electron microscope (SEM). RBS analysis indicated minimal element diffusion, and formation of ruthenium oxide after annealing at 500°C. Large-scale diffusion of ruthenium (Ru) was observed to commence at 700°C. The SEM images indicated that the as-deposited Ru was disorderly and amorphous. Annealing of the thin film improved the grain quality of Ru. The fabricated Ru-6H-SiC Schottky barrier diodes (SBD) with nickel ohmic contacts showed excellent rectifying behaviour and linear capacitance–voltage characteristics up to an annealing temperature of 900°C. The SBDs degraded after annealing at 1000°C. The degradation of the SBDs is attributed to the inter-diffusion of Ru and Si at the Schottky-substrate interface.

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Authors and Affiliations

  1. Department of Physics, University of Pretoria, Pretoria, 0002, South Africa

    Kinnock V. Munthali, Chris Theron, F. Danie Auret, Sergio M. M. Coelho & Eric Njoroge

  2. Department of Mathematics, Science and Sports Education, University of Namibia, HP Campus, P/Bag 5507, Oshakati, Namibia

    Kinnock V. Munthali

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  1. Kinnock V. Munthali
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  2. Chris Theron
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  3. F. Danie Auret
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  4. Sergio M. M. Coelho
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  5. Eric Njoroge
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Correspondence to Kinnock V. Munthali.

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Munthali, K.V., Theron, C., Auret, F.D. et al. Solid State Reaction and Operational Stability of Ruthenium Schottky Contact-on-6H-SiC Under Argon Annealing. J. Electron. Mater. 44, 3265–3271 (2015). https://doi.org/10.1007/s11664-015-3873-7

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  • DOI: https://doi.org/10.1007/s11664-015-3873-7

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