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Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

Journal of Electronic Materials volume 44, pages 3962–3966 (2015)Cite this article

Abstract

Nonvolatile memory (NVM) devices based on a metal–insulator–metal structure consisting of CdSe/ZnS quantum dots embedded in polymethylsilsesquioxane dielectric layers were fabricated. The current–voltage (I–V) curves showed a bistable current behavior and the presence of hysteresis. The current–time (I–t) curves showed that the fabricated NVM memory devices were stable up to 1 × 104 s with a distinct ON/OFF ratio of 104 and were reprogrammable when the endurance test was performed. The extrapolation of the I–t curve to 105 s with corresponding current ON/OFF ratio 1 × 105 indicated a long performance stability of the NVM devices. Schottky emission, Poole–Frenkel emission, trapped-charge limited-current and Child–Langmuir law were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I–V characteristics.

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Acknowledgement

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013R1A2A 1A01016467).

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    Authors and Affiliations

    1. Department of Electronics and Computer Engineering, Hanyang University, Seoul, Korea

      Zehao Ma, Dong Yeol Yun & Tae Whan Kim

    2. Institute of Optoelectronic Display, Fuzhou University, Fuzhou, China

      Poh Choon Ooi & Fushan Li

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    1. Zehao Ma
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    2. Poh Choon Ooi
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    3. Fushan Li
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    4. Dong Yeol Yun
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    Correspondence to Fushan Li or Tae Whan Kim.

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    Zehao Ma and Poh Choon Ooi have contributed equally to this work.

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    Ma, Z., Ooi, P.C., Li, F. et al. Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots. J. Electron. Mater. 44, 3962–3966 (2015). https://doi.org/10.1007/s11664-015-3872-8

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    • DOI: https://doi.org/10.1007/s11664-015-3872-8

    Keywords

    • Nonvolatile memory
    • polymethylsilsesquioxane
    • CdSe/ZnS quantum dot
    • electrical bistability
    • conduction mechanisms