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Orientation Dependence of Etch Pit Density in (111) and (211) CdZnTe Everson Etch

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Abstract

Everson solution is widely used for dislocation etching on (111)B and (211)B facets of CdTe and CdZnTe (CZT) wafers, but (211)B etch pit density (EPD) counts are lower. In this study, the correlation between the (111) and (211) Everson EPD counts was quantified by etching incrementally misoriented (111)B and (211)B facets of CdZnTe with counting by semi-automated optical microscopy. The EPD was found to decrease exponentially with increasing misorientation angle from (111)B. The results indicate that, for EPD to be a quantitative indicator of crystalline quality, precise crystal orientation angles must be taken into account. Based on the exponential curve fit, an estimation of the (111)B EPD values can be extrapolated from the EPD measured for (211)B etching.

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References

  1. X.P. Cui, W.Z. Fang, S.W. Sun, C.J. Zhang, H.L. Xu, and J.R. Yang, J. Cryst. Growth 321, 40 (2011). doi:10.1016/j.jcrysgro.2011.02.009.

    Article  Google Scholar 

  2. C. Buis, G. Marrakchi, T.A. Lafford, A. Brambilla, L. Verger, and E. Gros d’Aillon, Nucl. Sci. IEEE Trans. 60, 199 (2013). doi:10.1109/TNS.2012.2232306.

    Article  Google Scholar 

  3. J.D. Benson, L.O. Bubulac, P.J. Smith, R.N. Jacobs, J.K. Markunas, M. Jaime-Vasquez, L.A. Almeida, A.J. Stoltz, P.S. Wijewarnasuriya, G. Brill, Y. Chen, U. Lee, M.F. Vilela, J. Peterson, S.M. Johnson, D.D. Lofgreen, D. Rhiger, E.A. Patten, and P.M. Goetz, J. Electron. Mater. 39, 1080 (2010). doi:10.1007/s11664-010-1262-9.

    Article  Google Scholar 

  4. W.J. Everson, C.K. Ard, J.L. Sepich, B.E. Dean, G.T. Neugebauer, and H.F. Schaake, J. Electron. Mater. 24, 505 (1995). doi:10.1007/BF02657954.

    Article  Google Scholar 

  5. H. Chen, S.A. Awadalla, J. Mackenzie, R. Redden, G. Bindley, A.E. Bolotnikov, G.S. Camarda, G. Carini, and R.B. James, Nucl. Sci. IEEE Trans. 54, 811 (2007).

    Article  Google Scholar 

  6. M. Inoue, I. Teramoto, and S. Takayanagi, J. Appl. Phys. 33, 2578 (1962).

    Article  Google Scholar 

  7. L.C. Teaguea, M.C. Duffa, J.R. Cadieuxa, R. Soundararajanb, C.R. Shick Jr, and K.G. Lynnb, Nucl. Instrum. Methods Phys. Res. A 652, 178 (2011). doi:10.1016/j.nima.2010.09.061.

    Article  Google Scholar 

  8. Y. Jianrong, G. Huiming, C. Xinqiang, F. Weizheng, and H. Li, J. Synth. Cryst. 2, 172 (1999).

    Google Scholar 

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  1. Redlen Technologies, 1763 Sean Heights, Victoria, BC, V8M 1X6, Canada

    Lindsay Burgess, Francis Joseph Kumar & Jason Mackenzie

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  1. Lindsay Burgess
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  2. Francis Joseph Kumar
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  3. Jason Mackenzie
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Correspondence to Lindsay Burgess.

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Burgess, L., Kumar, F.J. & Mackenzie, J. Orientation Dependence of Etch Pit Density in (111) and (211) CdZnTe Everson Etch. J. Electron. Mater. 44, 3277–3282 (2015). https://doi.org/10.1007/s11664-015-3853-y

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  • DOI: https://doi.org/10.1007/s11664-015-3853-y

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