Abstract
The effects of sub-bandgap illumination on the charge transport process and detector performance were experimentally studied in detector-grade CdZnTe. Based on the resulting bulk resistivity and photocurrent response under sub-bandgap illumination, the variation of the deep-level occupation fraction was identified according to a modified Shockley–Read–Hall model. From laser-beam-induced transient current measurements, a decrease of negative space-charge density and consequently flattening of the electric field distribution were found under external sub-bandgap illumination, demonstrating a reduction of the active trap concentration. Furthermore, 241Am gamma-ray spectroscopy response measurements confirmed that simultaneous incidence of sub-bandgap light could significantly improve CdZnTe detector energy resolution and charge collection efficiency.
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Acknowledgements
The authors would like to give special thanks to Prof. Samuel Mao at University of California, Berkeley for the great help during the paper writing. This work was supported by the National Instrumentation Program (2011YQ040082), the National Natural Science Foundation of China (Grant Nos. 61274081, 51372205, and 51202197), the National 973 Project of China (2011CB610400), the fund of the State Key Laboratory of Solidification Processing in NWPU (SKLSP201410), and the 111 Project of China (B08040).
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Guo, R., Jie, W., Xu, Y. et al. Space-Charge Manipulation Under Sub-bandgap Illumination in Detector-Grade CdZnTe. J. Electron. Mater. 44, 3229–3235 (2015). https://doi.org/10.1007/s11664-015-3835-0
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DOI: https://doi.org/10.1007/s11664-015-3835-0