Abstract
Cu(111) is a suitable substrate for sixfold graphene domain synthesis, as confirmed theoretically and experimentally. However, an undulate striped structure, where stretched flower-like or approximate diamond-shaped graphene domains had formed, appeared on Cu(111) after annealing and growth in our study. Graphene domains were stretched along the undulate stripes. The Cu surface coated with graphene domains was flatter than the surrounding undulate striped structure. Oxygen plasma was used to remove the graphene coating, and the exposed Cu was also flat. We propose that slight steps formed on Cu(111) in the annealing process. The faster rate of graphene growth along these steps contributed to the stretching domain shape. Furthermore, the release of internal stress or the shrinking of Cu during cooling promotes the expansion step to form an undulate striped structure. However, the coated Cu step motion is limited by graphene. Consequently, the resulting surface is flat, thereby clearly indicating a graphene–Cu interaction.
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A. Reina, S. Thiele, X.T. Jia, S. Bhaviripudi, M.S. Dresselhaus, J.A. Schaefer, and J. Kong, Nano Res. 6, 2 (2009).
Z. Yan, J. Lin, Z.W. Peng, Z.Z. Sun, Y. Zhu, L. Li, C.S. Xiang, E.L. Samuel, C. Kittrell, and J.M. Tour, ACS Nano 10, 6 (2012).
B. Wu, D.C. Geng, Y.L. Guo, L.P. Huang, Y.Z. Xue, J. Zheng, J.Y. Chen, G. Yu, Y.Q. Liu, L. Jiang, and W.P. Hu, Adv. Mater. 31, 23 (2011).
B. Wu, D.C. Geng, Z.P. Xu, Y.L. Guo, L.P. Huang, Y.Z. Xue, J.Y. Chen, G. Yu, and Y.Q. Liu, NPG Asia Mater. 5, e36 (2013).
E. Dervishi, Z.R. Li, J. Shyaka, F. Watanabe, A. Biswas, J.L. Umwungeri, A. Courte, A.R. Biris, O. Kebdani, and A.S. Biris, Chem. Phys. Lett. 4–6, 501 (2011).
X.S. Li, C.W. Magnuson, A. Venugopal, R.M. Tromp, J.B. Hannon, E.M. Vogel, L. Colombo, and R.S. Ruoff, J. Am. Chem. Soc. 9, 133 (2011).
Z.G. Wang, Y.F. Chen, P.J. Li, X. Hao, Y. Fu, K. Chen, L.X. Huang, and D. Liu, Vacuum 7, 86 (2012).
X.S. Li, C.W. Magnuson, A. Venugopal, J.H. An, J.W. Suk, B.Y. Han, M. Borysiak, W.W. Cai, A. Velamakanni, Y.W. Zhu, L.F. Fu, E.M. Vogel, E. Voelkl, L. Colombo, and R.S. Ruoff, Nano Lett. 11, 10 (2010).
R.S. Edwards and K.S. Coleman, Acc. Chem. Res. 1, 46 (2013).
L.B. Gao, W.C. Ren, J.P. Zhao, L.P. Ma, Z.P. Chen, and H.M. Cheng, Appl. Phys. Lett. 18, 97 (2010).
X.S. Li, W.W. Cai, J.H. An, S. Kim, J. Nah, D.X. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S.K. Banerjee, L. Colombo, and R.S. Ruoff, Science 5932, 324 (2009).
W.H. Zhang, P. Wu, Z.Y. Li, and J.L. Yang, J. Phys. Chem. C 36, 115 (2011).
L. Zhao, K.T. Rim, H. Zhou, R. He, T.F. Heinz, A. Pinczuk, G.W. Flynn, and A.N. Pasupathy, Solid State Commun. 7, 151 (2011).
M. Ishihara, Y. Koga, J. Kim, K. Tsugawa, and M. Hasegawa, Mater. Lett. 19–20, 65 (2011).
R.M. Jacobberger and M.S. Arnold, Chem. Mater. 6, 25 (2013).
I. Jeon, H. Yang, S.H. Lee, J. Heo, D.H. Seo, J. Shin, U.I. Chung, Z.G. Kim, H.J. Chung, and S. Seo, ACS Nano 3, 5 (2011).
J.D. Wood, S.W. Schmucker, A.S. Lyons, E. Pop, and J.W. Lyding, Nano Lett. 11, 11 (2011).
E. Meca, J. Lowengrub, H. Kim, C. Mattevi, and V.B. Shenoy, Nano Lett. 11, 13 (2013).
A.T. Murdock, A. Koos, T. Ben Britton, L. Houben, T. Batten, T. Zhang, A.J. Wilkinson, R.E. Dunin-Borkowski, C.E. Lekka, and N. Grobert, ACS Nano 2, 7 (2013).
X.Y. Zhang, Z.W. Xu, L. Hui, J. Xin, and F. Ding, J. Phys. Chem. Lett. 19, 3 (2012).
X.H. Kong, H.X. Ji, R.D. Piner, H.F. Li, C.W. Magnuson, C. Tan, A. Ismach, H. Chou, and R.S. Ruoff, Appl. Phys. Lett. 4, 103 (2013).
K. Hayashi, S. Sato, and N. Yokoyama, Nanotechnology 2, 24 (2013).
W.S. Lim, Y.Y. Kim, H. Kim, S. Jang, N. Kwon, B.J. Park, J.H. Ahn, I. Chung, B.H. Hong, and G.Y. Yeom, Carbon 2, 50 (2012).
A.C. Ferrari and D.M. Basko, Nat. Nanotechnol. 4, 8 (2013).
D.R. Lenski and M.S. Fuhrer, J. Appl. Phys. 1, 110 (2011).
C. Lee, X.D. Wei, J.W. Kysar, and J. Hone, Science 5887, 321 (2008).
J.F. Gao, J. Yip, J.J. Zhao, B.I. Yakobson, and F. Ding, J. Am. Chem. Soc. 22, 134 (2012).
J.F. Gao, J.J. Zhao, and F. Ding, J. Am. Chem. Soc. 14, 134 (2012).
H.B. Shu, X.S. Chen, X.M. Tao, and F. Ding, ACS Nano 4, 6 (2012).
Acknowledgements
This work was supported by the National Science and Technology Major Project (Grant No. 2011ZX02707), the National Natural Science Foundation of China (Nos. 61136005 and 51402342), and the Shanghai Government (Grant Nos. 12JC1403900 and 12JC1410100).
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Zhang, Y., Zhang, H., Zhang, Y. et al. Undulate Cu(111) Substrates: A Unique Surface for CVD Graphene Growth. J. Electron. Mater. 44, 3550–3555 (2015). https://doi.org/10.1007/s11664-015-3804-7
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DOI: https://doi.org/10.1007/s11664-015-3804-7