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Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi0.4Sb1.6Te3 Film Fabricated by Molecular Beam Epitaxy

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Abstract

A highly crystalline Bi0.4Sb1.6Te3 film was fabricated on a Si substrate by molecular beam epitaxy (MBE) at a substrate temperature of 280°C. On the basis of study of x-ray diffraction patterns and high-resolution transmission electron microscopy lattice fringes it was inferred that Bi atoms were successfully incorporated into Sb lattice sites, forming substituent Bi impurities. Reduction of the carrier concentration was ascribed to the increased resistance to formation of antisite defects when Sb was substituted by Bi. The reduced mobility was a result of enhanced grain boundary scattering and attraction by substituent Bi atoms. Analysis of temperature-dependent electrical transport properties revealed that introduction of Bi atoms resulted in deeper energy level impurities in the Bi0.4Sb1.6Te3 film and higher activation energy (43.2 meV) than the normal value at room temperature, leading to semiconductor characteristics of the film in the temperature range −50°C to 150°C.

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Acknowledgement

This research was supported by Shanghai Science and Technology Funds (10520710400, 10PJ140 3800, 11DZ1111200), the National Natural Science Foundation of China (21103104, 61204129), the Innovation Foundation of Shanghai University, and the Special Fund for Selection and Cultivation of Excellent Youth in the University of Shanghai city. We also acknowledge the Instrument Analysis and Research Center of Shanghai University for providing measurement service.

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Authors and Affiliations

  1. Department of Physics, Shanghai University, Shanghai, 200444, China

    Zhichong Wang, Xiangpeng Zhang, Yigui Wu & Zhiyu Hu

  2. Institute of NanoMicroEnergy, Shanghai University, Shanghai, 200444, China

    Zhichong Wang, Xiangpeng Zhang, Yigui Wu & Zhiyu Hu

  3. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China

    Zhiyu Hu

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  1. Zhichong Wang
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  2. Xiangpeng Zhang
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Correspondence to Zhiyu Hu.

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Wang, Z., Zhang, X., Wu, Y. et al. Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi0.4Sb1.6Te3 Film Fabricated by Molecular Beam Epitaxy. J. Electron. Mater. 44, 3334–3340 (2015). https://doi.org/10.1007/s11664-015-3782-9

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  • DOI: https://doi.org/10.1007/s11664-015-3782-9

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