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Surface-Morphology-Induced Hydrophobicity of Fluorocarbon Films Grown by a Simultaneous Etching and Deposition Process

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Abstract

Development of facile methods to prepare hydrophobic films is of great important. We report fluorocarbon films deposited by a simple plasma-assisted chemical vapor deposition method using C3F8 and C2H2 with extra Ar and/or O2 gases. The surface characteristics of the films were examined by scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. The hydrophobic and oleophobic properties of the films were evaluated by measurements of static contact angle. The results showed that the film deposited with C3F8, C2H2, Ar, and O2 exhibited a water contact angle of 114°, hexadecane contact angle of 45°, and transmittance of 94.5%. Photoelectron spectra further revealed that the films contained mainly CF and CF2 bonds and thus a high F/C ratio. Introduction of O2 increased the F/C ratio, which combined with the stripe-like surface of the films achieved better hydrophobicity.

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Acknowledgements

The authors thank the Ministry of Science and Technology of the Republic of China, Taiwan for financially supporting this research under Contract No. 103-2221-E-150-006 and the Common Laboratory for Micro/Nano Science and Technology of National Formosa University for experimental support of this work.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Formosa University, Huwei, 632, Taiwan

    J.S. Fang & C.S. Lin

  2. Lincotech Corp., Taichung, 400, Taiwan

    Y.Y. Huang

  3. Department of Materials Science and Engineering, Feng Chia University, Taichung, 400, Taiwan

    T.S. Chin

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  1. J.S. Fang
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  2. C.S. Lin
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  3. Y.Y. Huang
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  4. T.S. Chin
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Correspondence to J.S. Fang.

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Fang, J., Lin, C., Huang, Y. et al. Surface-Morphology-Induced Hydrophobicity of Fluorocarbon Films Grown by a Simultaneous Etching and Deposition Process. J. Electron. Mater. 44, 2908–2914 (2015). https://doi.org/10.1007/s11664-015-3768-7

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  • DOI: https://doi.org/10.1007/s11664-015-3768-7

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