Skip to main content
Log in

Thermal Stress of Surface Oxide Layer on Micro Solder Bumps During Reflow

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Micro-bumps are now being developed with diameters smaller than 10 μm. At these dimensions, only very small amounts of solder are used to form the interconnections. Surface oxidation of such small micro-bumps is a critical issue. The key question is whether the oxide film on the solder bumps acts as a barrier to formation of solder joints. In this work, the mechanical stability of the oxide layer on solder bumps was investigated. Solder bumps with 35-μm radii were heated for different times. Auger electron spectroscopy was used to determine the thickness of the oxide layer on the solder bumps. Solder bumps with known oxide layer thicknesses were then heated in a low-oxygen environment (<50 ppm) until they melted. The mechanical stability of the oxide layer was observed by use of a high-speed camera. Results showed that a 14-nm-thick oxide layer on a solder bump of radius 35 μm was able to withstand the molten solder without cracking, leading to a non-wetting solder joint. A thermal stress model of the surface oxide layer revealed that the stress varied substantially with bump size and temperature, and increased almost linearly with temperature. Upon melting, the thermal stress on the oxide increased abruptly, because of the higher thermal expansion of molten solder compared with its solid state. On the basis of the experimental results and the thermal stress model of the oxide film, the maximum oxide thickness that can be tolerated to form a solder joint was determined, e.g. 14 nm oxide can support liquid solder, and thus lead to a non-wetting condition. This work provided a new method of determination of the maximum stress of oxide film for solder joint formation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. R. Chanchani, Materials for Advanced Packaging, ed. D. Lu and C.P. Wong (Boston: Springer, 2009), pp. 4–27.

  2. K.N. Tu, Microelectron. Reliab. 51, 517 (2011).

    Article  Google Scholar 

  3. C.K. Chung, Y.J. Chen, C.C. Li, and C.R. Kao, Thin Solid Films 520, 5346 (2012).

    Article  Google Scholar 

  4. X. Luo, W. Du, X. Lu, T. Yamaguchi, J. Gavin, L. Ye, and J. Liu, IEEE International Symposium on Advanced Packaging Materials, Xiamen, China October 25–28 (2011), pp. 73–79.

  5. S. Zhang, Y. Zhang, and H. Wang, J. Alloys Compd. 487, 682 (2009).

    Article  Google Scholar 

  6. S. Cho, J. Yu, S.K. Kang, and D.-Y. Shih, JOM 57, 50 (2005).

  7. F.Y. Hung, H.-M. Lin, P.-S. Chen, T.-S. Lui, and L.-H. Chen, J. Alloys Compd. 415, 85 (2006).

  8. J. Gorlich, C.C. Oberdorfer, D. Baither, G. Schmitz, C. Reinke, and U. Wilke, J. Alloys Compd. 490, 336 (2010).

    Article  Google Scholar 

  9. M. Abtew and G. Selvaduray, Mat. Sci. Eng. R 27, 95 (2000).

    Article  Google Scholar 

  10. C.M.L. Wu, D.Q. Yu, C.M.T. Law, and L. Wang, Mater. Sci. Eng., R 44, 1 (2004).

    Article  Google Scholar 

  11. T. Laurila, V. Vuorinen, and M. Paulasto-Krockel, Mater. Sci. Eng., R 68, 1 (2010).

    Article  Google Scholar 

  12. J. Zhou, D. Huang, Y.-L. Fang, and F. Xue, J. Alloys Compd. 480, 903 (2009).

  13. M.A. Dudek and N. Chawla, J. Electron. Mater. 38, 210 (2009).

    Article  Google Scholar 

  14. C.K. Chung, T.C. Huang, R. Shia, T.L. Yang, and C.R. Kao, J. Alloys Compd. 539, 57 (2012).

    Article  Google Scholar 

  15. C.-H. Hsueh and A.G. Evans, J. Appl. Phys. 54, 6672 (1983).

    Article  Google Scholar 

  16. S.M. Hu, J. Appl. Phys. 64, 323 (1988).

    Article  Google Scholar 

  17. C.S. Rafferty and R.W. Dutton, Appl. Phys. Lett. 54, 1815 (1989).

    Article  Google Scholar 

  18. C.-H. Hsueh and S. Lee, J. Appl. Phys. 91, 2760 (2002).

    Article  Google Scholar 

  19. K.-S. Kim, K. Suganuma, J.-M. Kim, and C.-W. Hwang, JOM 56, 39 (2004).

  20. R. DeHoff, Thermodynamic in Materials Science, 2nd edn. (New York: CRC Press Taylor & Francis, 2006), Chap. 4 and 12.

  21. P.G. Harrison, Chemistry of Tin, ed. P.J. Smith (New York: Springer, 1998), pp. 1–9.

  22. K.H. Schramm, Z. Metallk. 53, 316 (1962).

    Google Scholar 

  23. P.L. Clavette, A Study of Tin Wisker Growth in Electronics (MSc thesis, Mech. Eng. Rensselaer Polytechnic Institute, August 2009).

  24. B. Saatci, S. Cimen, H. Pamuk, and M. Gündüz, J. Phys.: Condens. Matter 19, 326219 (2007).

  25. S. Sharafat and N. Ghoniem, Summary of Thermo-Physical Properties of Sn and its Compounds (Uni. of California L.A., 2000), pp. 8–23.

  26. O. Madelung, U. Rössler, and M. Schulz, Tin Dioxide (SnO 2 ) Crystal Structure, Lattice Parameters, Thermal Expansion (The Landolt-Börnstein database-Group III Condensed Matter, Vol III 17E, 17F-41C) Chap. T1.

  27. S. Barth, C. Harnagea, S. Mathur, and F. Rosei, Nanotechnology 20, 115705 (2009).

    Article  Google Scholar 

  28. http://en.wikipedia.org/wiki/Atmospheric_pressure

  29. C.K. Chung, Y.J. Chen, T.L. Yang, and C.R. Kao, J. Electron. Mater. 42, 1254 (2013).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to C. Key Chung.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Key Chung, C., Zhu, Z.X. & Kao, C.R. Thermal Stress of Surface Oxide Layer on Micro Solder Bumps During Reflow. J. Electron. Mater. 44, 744–750 (2015). https://doi.org/10.1007/s11664-014-3528-0

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-014-3528-0

Keywords

Navigation