Journal of Electronic Materials

, Volume 44, Issue 1, pp 188–193

Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition

  • A. Kadys
  • T. Malinauskas
  • T. Grinys
  • M. Dmukauskas
  • J. Mickevičius
  • J. Aleknavičius
  • R. Tomašiūnas
  • A. Selskis
  • R. Kondrotas
  • S. Stanionytė
  • H. Lugauer
  • M. Strassburg
Article

DOI: 10.1007/s11664-014-3494-6

Cite this article as:
Kadys, A., Malinauskas, T., Grinys, T. et al. Journal of Elec Materi (2015) 44: 188. doi:10.1007/s11664-014-3494-6

Abstract

InN and In-rich InGaN layers have been grown on GaN templates using the pulsed metalorganic chemical vapor deposition (MOCVD) technique and compared with analogous layers grown by conventional MOCVD. Structural investigations were performed using x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Surface morphology was studied using atomic force microscopy. Electrical and optical properties were studied using Hall measurements and photoluminescence (PL) spectroscopy. All layers were free of metal droplets. InN grown using pulsed MOCVD showed fairly low background electron concentration (ne = 8 × 1018 cm−3 to 9 × 1018 cm−3) and high electron mobility (μe = 644 cm2 V−1 s−1). Structural studies revealed increase of size (from 100 nm to 500 nm) and decrease of density of InN islands at higher growth temperatures. For In-rich InGaN layers (In content 68% and 80%) the density of islands was similar to that in InN, while the diameter varied from 50 nm to 150 nm. Inhomogeneities of In and Ga distribution in the layers resulting in broadened XRD lines and PL bands are discussed.

Keywords

Group III nitrides InN InGaN MOCVD pulsed growth 

Copyright information

© European Union 2014

Authors and Affiliations

  • A. Kadys
    • 1
  • T. Malinauskas
    • 1
  • T. Grinys
    • 1
  • M. Dmukauskas
    • 1
  • J. Mickevičius
    • 1
    • 2
  • J. Aleknavičius
    • 1
    • 2
  • R. Tomašiūnas
    • 1
  • A. Selskis
    • 3
  • R. Kondrotas
    • 3
  • S. Stanionytė
    • 1
    • 3
  • H. Lugauer
    • 4
  • M. Strassburg
    • 4
  1. 1.Institute of Applied ResearchVilnius UniversityVilniusLithuania
  2. 2.Semiconductor Physics Department, Faculty of PhysicsVilnius UniversityVilniusLithuania
  3. 3.Department of Characterization of Materials Structure, Institute of ChemistryCentre for Physical Sciences and TechnologyVilniusLithuania
  4. 4.OSRAM Opto Semiconductors GmbHRegensburgGermany

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