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Structural and Electrical Properties of Ta ax La(1−a)x O y Thin Films

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Abstract

Effect of annealing temperature on the characteristics of sol–gel-driven Ta ax La(1−a)x O y thin film spin-coated on Si substrate as a high-k gate dielectric was studied. Ta ax La(1−a)x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3x La0.7x Oy film had an amorphous structure. Therefore, Ta0.3x La0.7x O y film was chosen to continue the present studies. The morphology of Ta0.3x La0.7x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3x La0.7x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance–voltage (C–V) and current density–voltage (J–V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3x La0.7x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10−6 A/cm2 at 1 V).

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Authors and Affiliations

  1. Department of Solid State Physics, University of Mazandaran, 4741695447, Babolsar, Iran

    Zahra Khorshidi, Ali Bahari & Reza Gholipur

Authors
  1. Zahra Khorshidi
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  2. Ali Bahari
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  3. Reza Gholipur
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Correspondence to Zahra Khorshidi.

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Khorshidi, Z., Bahari, A. & Gholipur, R. Structural and Electrical Properties of Ta ax La(1−a)x O y Thin Films. J. Electron. Mater. 43, 4349–4356 (2014). https://doi.org/10.1007/s11664-014-3353-5

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  • DOI: https://doi.org/10.1007/s11664-014-3353-5

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