Journal of Electronic Materials

, Volume 43, Issue 11, pp 4064–4069 | Cite as

Interfacial Reaction Between Nb Foil and n-Type PbTe Thermoelectric Materials During Thermoelectric Contact Fabrication

  • Haiyang Xia
  • Cheng-Lung Chen
  • Fivos Drymiotis
  • Aiping Wu
  • Yang-Yuan Chen
  • G. Jeffrey Snyder
Article

Abstract

PbTe is a high-conversion-efficiency thermoelectric (TE) material that is commonly used in space exploration applications. Integration of PbTe in TE devices has a significant impact on the conversion efficiency and reliability of TE devices. Hence, our effort focuses on developing novel approaches for bonding metallic contacts to PbTe to improve device performance and reliability. In this study, pure Nb foil was directly bonded to PbTe-based TE materials to fabricate the hot-side contacts of TE elements using a rapid hot-press. The materials were sintered at 700°C under pressure of 40 MPa for various holding times. We found that a reaction layer of needle-like Nb3Te4 mixed with Pb forms at the interface of the Nb/PbTe joints and that Pb is distributed in the gaps of the Nb3Te4 grains. We analyze the resulting microstructure and finally calculate the time exponent of the growth kinetics of the Nb3Te4 layer. Fracture surface analysis showed that the Nb/PbTe joint fractures at the interface between Nb and Nb3Te4 and within the PbTe matrix, indicating that the bonding between Nb and Nb3Te4 is weak.

Keywords

PbTe-based thermoelectric materials Nb foil Nb/PbTe joints hot-press sintering 

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References

  1. 1.
    G.J. Snyder and E.S. Toberer, Nat. Mater. 7, 105 (2008).CrossRefGoogle Scholar
  2. 2.
    A.D. LaLonde, Y.Z. Pei, H. Wang, and G.J. Snyder, Mater. Today 14, 526 (2011).CrossRefGoogle Scholar
  3. 3.
    S.P. Feng, Y.H. Chang, J. Yang, B. Poudel, B. Yu, Z.F. Ren, and G. Chen, Phys. Chem. Chem. Phys. 15, 6757 (2013).CrossRefGoogle Scholar
  4. 4.
    J.H. Yang and T. Caillat, MRS Bull. 31, 224 (2006).CrossRefGoogle Scholar
  5. 5.
    S.W. Chen, H.J. Wu, C.Y. Wu, C.F. Chang, and C.Y. Chen, J. Alloys Compd. 553, 106 (2013).CrossRefGoogle Scholar
  6. 6.
    H. Zhang, H.Y. Jing, Y.D. Han, L.Y. Xu, and G.Q. Lu, J. Alloys Compd. 576, 424 (2013).CrossRefGoogle Scholar
  7. 7.
    Y.C. Lan, D.Z. Wang, G. Chen, and Z.F. Ren, Appl. Phys. Lett. 92, 101910 (2008).CrossRefGoogle Scholar
  8. 8.
    T.Y. Lin, C.N. Liao, and A.T. Wu, J. Electron. Mater. 41, 153 (2012).CrossRefGoogle Scholar
  9. 9.
    L.C. Lo and A.T. Wu, J. Electron. Mater. 41, 3325 (2012).CrossRefGoogle Scholar
  10. 10.
    D.G. Zhao, X.Y. Li, L. He, W. Jiang, and L.D. Chen, J. Alloys Compd. 477, 425 (2009).CrossRefGoogle Scholar
  11. 11.
    D.G. Zhao, H.R. Geng, and X. Teng, J. Alloys Compd. 517, 198 (2012).CrossRefGoogle Scholar
  12. 12.
    A.L. Eiss, Thermoelectric Bonding Study (Washington D.C.: NASA, 1966).Google Scholar
  13. 13.
    M. Weinstein and A.I. Mlavsky, Rev. Sci. Instrum. 33, 1119 (1962).CrossRefGoogle Scholar
  14. 14.
    Y. Hikage, S. Masutani, T. Sato, S. Yoneda, and Y. Ohno, Proceedings of 26th ICT, Jeju, Korea (2007, 331 p.).Google Scholar
  15. 15.
    S.A. Yamini, T. Ikeda, A. Lalonde, Y.Z. Pei, S.X. Dou, and G.J. Snyder, J. Mater. Chem. A 1, 8725 (2013).CrossRefGoogle Scholar
  16. 16.
    H.Y. Xia, F. Drymiotis, C.L. Chen, A.P. Wu, and G.J. Snyder, J. Mater. Sci. 49, 1716 (2014).CrossRefGoogle Scholar
  17. 17.
    H. Okamoto, Binary Alloy Phase Diagrams, 2nd ed., Vol. 3, ed. T.B. Massalski (Materials Park: ASM International, 1990), p. 2772.Google Scholar

Copyright information

© The Minerals, Metals & Materials Society 2014

Authors and Affiliations

  • Haiyang Xia
    • 1
    • 2
    • 3
  • Cheng-Lung Chen
    • 1
    • 4
  • Fivos Drymiotis
    • 1
  • Aiping Wu
    • 2
    • 3
  • Yang-Yuan Chen
    • 4
  • G. Jeffrey Snyder
    • 1
  1. 1.Department of Materials ScienceCalifornia Institute of TechnologyPasadenaUSA
  2. 2.Department of Mechanical EngineeringTsinghua UniversityBeijingChina
  3. 3.Key Laboratory for Advanced Materials Processing TechnologyMinistry of EducationBeijingChina
  4. 4.Institute of PhysicsAcademia SinicaTaipeiTaiwan

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