Carbon-Incorporated Amorphous Indium Zinc Oxide Thin-Film Transistors

Abstract

We propose the use of amorphous-carbon indium zinc oxide (a-CIZO) as a channel material for thin-film transistor (TFT) fabrication. This study chose a carbon dopant as a carrier suppressor and strong oxygen binder in amorphous-indium zinc oxide (a-IZO) channel material. a-CIZO thin films were deposited using radiofrequency (RF) sputtering and postannealed at 150°C. X-ray diffraction and transmission electron microscopy analysis revealed that the film remained amorphous even after postannealing. The a-CIZO TFT postannealed at 150°C exhibited saturation field-effect mobility of 16.5 cm2 V−1 s−1 and on–off current ratio of ∼4.3 × 107.

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Acknowledgements

This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (NRF-2013 R1A1A1061213).

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Correspondence to J.-Y. Kwon.

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Parthiban, S., Park, K., Kim, HJ. et al. Carbon-Incorporated Amorphous Indium Zinc Oxide Thin-Film Transistors. Journal of Elec Materi 43, 4224–4228 (2014). https://doi.org/10.1007/s11664-014-3333-9

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Keywords

  • Metal oxide
  • amorphous
  • thin-film transistor
  • sputtering