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Strain Distribution Across HVPE GaN Layer Grown on Large Square-Patterned Template Studied by Micro-Raman Scattering

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Abstract

A self-separated GaN layer was prepared by hydride vapor phase epitaxy on a large-period square network template. The morphology of the surface formed was consistent with the substrate patterning that comprised terrace and concave. The mixed polarity of the surface was studied by wet etching and micro-Raman scattering. Micro-Raman scattering was performed to investigate the strain distribution of the surface on the front and backside, as well as the cross-section. Differences were observed in the Raman phonon peaks such as the A1(LO), E1(TO), E2(high) phonon, and LO phonon–plasmon mode (LPP−)/A1(TO) peaks between the terrace and concave. The strain distribution varied regularly, which was interpreted based on the facet growth mode.

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References

  1. T. Tojyo, T. Asano, M. Takeya, T. Hino, S. Kijima, S. Goto, S. Uchida, and M. Ikeda, Jpn. J. Appl. Phys. 40, 3206 (2001).

    Article  Google Scholar 

  2. J. Zhong, H. Chen, G. Saraf, Y. Lu, C.K. Choi, J.J. Song, D.M. Mackie, and H. Shen, Appl. Phys. Lett. 90, 203515 (2007).

    Article  Google Scholar 

  3. S. Nagahama, N. Iwasa, M. Senoh, T. Matsushita, Y. Sugimoto, H. Kiyoku, T. Kozaki, M. Sano, H. Matsumura, H. Umemoto, K. Chocho, and T. Mukai, Jpn. J. Appl. Phys. 39, L647 (2000).

    Article  Google Scholar 

  4. S. Porowski and I. Grzegory, J. Cryst. Growth 178, 174 (1997).

    Article  Google Scholar 

  5. T. Hashimoto, K. Fujito, M. Saito, J.S. Speck, and S. Nakamura, Jpn. J. Appl. Phys. 44, L1570 (2005).

    Article  Google Scholar 

  6. F. Kawamura, H. Umeda, M. Morishita, M. Kawahara, M. Yoshimura, Y. Mori, T. Sasaki, and Y. Kitaoka, Jpn. J. Appl. Phys. 45, L1136 (2006).

    Article  Google Scholar 

  7. M.K. Kelly, R.P. Vaudo, V.M. Phanse, L. Gorgens, O. Ambacher, and M. Stutzmann, Jpn. J. Appl. Phys. 38, L217 (1999).

    Article  Google Scholar 

  8. K. Motoki, T. Okahisa, N. Matsumoto, and T. Nishimoto, GaN single crystal substrate and method of producing same. US6413627B1 (2002).

  9. Y. Oshima, T. Eri, M. Shibata, H. Sunakawa, K. Kobayashi, T. Ichihashi, and A. Usui, Jpn. J. Appl. Phys. 42, L1 (2003).

    Article  Google Scholar 

  10. J. Tourret, O. Gourmala, Y. André, A. Trassoudaine, E. Gil, D. Castelluci, and R. Cadoret, J. Cryst. Growth 311, 1460 (2009).

    Article  Google Scholar 

  11. Y. Jung, K.H. Baik, F. Ren, S.J. Pearton, and J. Kim, J. Electrochem. Soc. 157, H676 (2010).

    Article  Google Scholar 

  12. H.M. Ng, W. Parz, N.G. Weimann, and A. Chowdhury, Jpn. J. Appl. Phys. 42, L1405 (2003).

    Article  Google Scholar 

  13. H.M. Ng, N.G. Weimann, and A. Chowdhury, J. Appl. Phys. 94, 650 (2003).

    Article  Google Scholar 

  14. K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, J. Cryst. Growth 221, 316 (2000).

    Article  Google Scholar 

  15. F. Lipski, Annual Report 2009, Institute of Optoelectronics, Ulm University.

  16. M.H. Kim, Y. Choi, J.H. Yi, M. Yang, J. Jeon, S. Khym, and S.J. Leem, J. Cryst. Growth 236, 95 (2002).

    Article  Google Scholar 

  17. P. Fini, H. Marchand, J.P. Ibbetson, S.P. DenBaars, U.K. Mishra, and J.S. Speck, J. Cryst. Growth 209, 581 (2000).

    Article  Google Scholar 

  18. T. Kozawa, T. Kachi, H. Kano, Y. Taga, M. Hashimoto, N. Koide, and K. Manabe, J. Appl. Phys. 75, 1098 (1994).

    Article  Google Scholar 

  19. C.M. Lee, J.K. Hite, M.A. Mastro, J.A. Freitas Jr, C.R. Eddy Jr, H.Y. Kim, and J.Y. Kim, J. Vac. Sci. Technol. A 30, 040602 (2012).

    Article  Google Scholar 

  20. H.J. Park, H.Y. Kim, J.Y. Bae, S.H. Shin, and J.H. Kim, J. Cryst. Growth 350, 85 (2012).

    Article  Google Scholar 

  21. C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J.W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, E.R. Weber, M.D. Bremser, and R.F. Davis, Phys. Rev. B 54, 17745 (1996).

    Article  Google Scholar 

  22. VYu Davydov, YuE Kitaev, I.N. Goncharuk, A.N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M.B. Smirnov, A.P. Mirgorodsky, and R.A. Evarestov, Phys. Rev. B 58, 12899 (1998).

    Article  Google Scholar 

  23. N.E. Christensen and P. Perlin, Semiconductors and Semimetals, ed. by J.I. Pankove and T. D. Moustakas, (Academic: London, 1998) vol. 50, p. 409.

  24. S. Tripathy, S. Chua, P. Chen, and Z. Miao, J. Appl. Phys. 92, 3503 (2002).

    Article  Google Scholar 

  25. P. Perlin, T. Suski, H. Teiseyre, M. Leszcynsky, I. Grzegory, J. Jun, S. Porowski, P. Boguslawski, J. Bernholc, J.C. Chervin, A. Polian, and T.D. Moustakas, Phys. Rev. Lett. 75, 296 (1995).

    Article  Google Scholar 

  26. H. Lei, H.S. Leipner, J. Schreiber, J.L. Weyher, T. Wosiński, and I. Grzegory, J. Appl. Phys. 92, 6666 (2002).

    Article  Google Scholar 

  27. Y.P. Sui, B. Wang, Z.D. Zhao, W. Xu, X.L. Li, X.Z. Wang, and G.H. Yu, J. Cryst. Growth 394, 11 (2014).

    Article  Google Scholar 

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Acknowledgements

This work was partly supported by the National Natural Science Foundation of China (Grant No. 61240015), the Natural Science Foundation of Guangdong Province (Grant No. S2012010010030), and the Basic Research Plan Program of Shenzhen City (Grant Nos. JCYJ20120615101957810, JCYJ2013040110051 3002).

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Authors and Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Yanping Sui, Bin Wang, Zhide Zhao, Wei Xu, Xiaoliang Li & Guanghui Yu

  2. Shenzhen Institute of Information Technology, Shenzhen, 518172, China

    Xinzhong Wang

Authors
  1. Yanping Sui
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  2. Bin Wang
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  3. Zhide Zhao
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  4. Wei Xu
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  6. Guanghui Yu
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  7. Xinzhong Wang
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Correspondence to Guanghui Yu.

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Sui, Y., Wang, B., Zhao, Z. et al. Strain Distribution Across HVPE GaN Layer Grown on Large Square-Patterned Template Studied by Micro-Raman Scattering. J. Electron. Mater. 43, 2715–2722 (2014). https://doi.org/10.1007/s11664-014-3225-z

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  • DOI: https://doi.org/10.1007/s11664-014-3225-z

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