Abstract
We investigated the compositional, microstructural, and electrical properties of undoped and nitrogen-doped Ge2Sb2Te5 films subjected to long-term thermal annealing under air atmosphere. Considering the absence of chemical and structural changes, the sheet resistances of samples annealed at 200°C may potentially be related to changes in the lattice parameters. The disappearance of Ge–N bonds and decrease of Ge and N concentrations in samples treated at 300°C were found to depend on the cubic to hexagonal phase transition.
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Kim, KH., Yun, DJ., Kyoung, YK. et al. Long-Term Structural Instabilities in Undoped and Nitrogen-Doped Ge2Sb2Te5 Films. J. Electron. Mater. 43, 3082–3086 (2014). https://doi.org/10.1007/s11664-014-3221-3
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DOI: https://doi.org/10.1007/s11664-014-3221-3