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(211)-Oriented Domain Formation During Growth of ZnTe on m-Plane Sapphire by MBE

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Abstract

ZnTe epilayers have been grown on 2°-tilted m-plane \(\left( {10\overline{1} 0} \right)\) sapphire substrates by molecular beam epitaxy. Pole figure imaging was used to study the domain distribution within the layer, and the pole figures of 111, 220, 004, and 422 ZnTe and \(30\overline{3} 0\) sapphire were measured. Computer simulation was used to analyze the symmetry of the diffraction patterns seen in the pole figure images. Stereographic projections were also compared with the pole figures of 422 and 211 ZnTe, confirming that single-domain (211)-oriented ZnTe epilayers had been grown on the 2°-tilted m-plane sapphire substrates. Although differences in crystal structure and lattice mismatch were severe in these heterostructures, precise control of the substrate surface’s lattice arrangement would result in the formation of high-quality epitaxial layers.

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Authors and Affiliations

  1. Department of Electrical Engineering and Bioscience, Waseda University, Shinjuku, Tokyo, 169-8555, Japan

    Taizo Nakasu

  2. Kagami Memorial Research Institute for Materials and Technology, Waseda University, Shinjuku, Tokyo, 169-0051, Japan

    Masakazu Kobayashi

  3. NTT Microsystem Integration Laboratories, Atsugi, Kanagawa, 243-0198, Japan

    Hiroyoshi Togo

  4. Technology Development Center, JX Nippon Mining & Metals Corporation, Hitachi, Ibaraki, 317-0056, Japan

    Toshiaki Asahi

Authors
  1. Taizo Nakasu
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  2. Masakazu Kobayashi
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  3. Hiroyoshi Togo
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  4. Toshiaki Asahi
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Correspondence to Taizo Nakasu.

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Nakasu, T., Kobayashi, M., Togo, H. et al. (211)-Oriented Domain Formation During Growth of ZnTe on m-Plane Sapphire by MBE. J. Electron. Mater. 43, 921–925 (2014). https://doi.org/10.1007/s11664-014-3028-2

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  • DOI: https://doi.org/10.1007/s11664-014-3028-2

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