Skip to main content
SpringerLink
Log in

Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Nitride-based semiconductors are gaining importance not only for high-power applications but also for high-temperature electronic devices. Using photoluminescence (PL) techniques, it is now possible to simultaneously determine the temperatures of the lattice and hot electrons in these devices. Therefore, it is possible to use PL mapping measurements to derive temperature profiles for electrons and the lattice in the active region of an operating device with a single set of measurements. This work presents an experimental process to construct such spatially resolved temperature maps for a planar semiconductor device under bias and applies this approach to a specific example using the conductive channels of a biased AlGaN/GaN high-electron-mobility transistor. Studying the temperature distribution inside the conductive channels will help understand how electrons flowing in the device interact with the lattice as well as the process of heat generation within the device.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M.S. Shur and R.F. Davis, GaN-Based Materials and Devices, 1st edn. (Singapore: World Scientific, 2004), pp. 225–244

    Google Scholar 

  2. T. Steiner, Semiconductor Nanostructures for Optoelectronic Applications, 1st edn. (Norwood, MA: Artech House, 2004), pp. 19, 289–344

    Google Scholar 

  3. A.R. Barnes, A. Boetti, L. Marchand and J. Hopkins, (Paper presented at 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium EGAAS, Paris, 3–4 October 2005)

  4. M.A.G. Darrin, S.P. Buchner, and M. Martin, (Paper presented at 8th European Conference on Radiation and Its Effects on Components and Systems RADECS, Cap d’Agde, 19–23 September 2005)

  5. R. Quay, Gallium Nitride Electronics, 1st edn. (Berlin, Germany: Springer, 2008), pp. 311–336

    Google Scholar 

  6. F.J. Pollack, (Paper presented at 32nd Annual International Symopsium on Microarchitecture MICRO-32, Haifa, 16–18 November 1999)

  7. A. Matulionis, J. Liberis, I. Matulioniene, E. Sermuksnis, J.H. Leach, M. Wu, and H. Morkoc, Phys. Status Solidi A 208, 30 (2011)

    Article  Google Scholar 

  8. A. Majumdar, K. Fushinobu, and K. Hijikata, J. Appl. Phys. 77, 6686 (1995)

    Article  Google Scholar 

  9. J. Bolte, F. Niebisch, J. Pelzl, P. Stelmaszyk, and A.D. Wieck, J. Appl. Phys. 84, 6917 (1998)

    Article  Google Scholar 

  10. P. Wang and A. Bar-Cohen, J. Appl. Phys. 102, 11 (2007)

    Google Scholar 

  11. Y. Zhang, G. Zeng, C. Hoffman, A. Bar-Cohen, and A. Shakouri, IEEE Trans. Compon. Packag. Technol., 31, 552 (2008)

    Article  Google Scholar 

  12. C.F. Lo, F. Ren, S.J. Pearton, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, I.A. Belogorokhov, A.I. Belogorokhov, V.Y. Reznik, and J.W. Johnson, J. Vac. Sci. Technol. B, 29, 4 (2011)

    Google Scholar 

  13. C.H. Lin, T.A. Merz, D.R. Doutt, M.J. Hetzer, J. Joh, J.A. del Alamo, U.K. Mishra, and L.J. Brillson, Appl. Phys. Lett., 95, 3 (2009)

    Google Scholar 

  14. G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, IEEE Technol. Device Mater. Reliab., 8, 332 (2008)

    Article  Google Scholar 

  15. M. Tapajna, R.J.T. Simms, Y. Pei, U. Mishra, and M. Kuball, IEEE Electron Device Lett., 31, 7 (2010)

    Article  Google Scholar 

  16. M. Gonschorek, D. Simeonov, J.F. Carlin, E. Feltin, M.A. Py, and N. Grandjean, Eur. Phys. J. Appl. Phys., 47, 3 (2009)

    Article  Google Scholar 

  17. N. Shigekawa, K. Onodera, and K. Shiojima, Jpn. J. Appl. Phys., 42, 2245 (2003)

    Article  Google Scholar 

  18. T. Batten, A. Manoi, M.J. Uren, T. Martin, and M. Kuball, J.␣Appl. Phys., 107, 174502 (2010)

    Article  Google Scholar 

  19. S.K. Tripathy, G. Xu, X. Mu, Y.J. Ding, K. Wang, Y. Cao, D. Jena, and J.B. Khurgin, Appl. Phys. Lett., 92, 3 (2008)

    Article  Google Scholar 

  20. G. Xu, S.K. Tripathy, X. Mu, Y.J. Ding, K. Wang, Y. Cao, D. Jena, and J.B. Khurgin, Laser Phys., 19, 745 (2009)

    Article  Google Scholar 

  21. B. Claflin, E.R. Heller, B. Winningham, J.E. Hoelscher, M. Bellott, K. Chabak, A. Crespo, J. Gillespie, V. Miller, M. Trejo, G.H. Jessen, and G.D. Via (Paper presented at CS MANTECH Conference, Tampa, 18–21 May 2009)

  22. J. Shah, A. Pinczuk, C. Gossard, and W. Wiegmann, Phys. Rev. Lett., 54, 2045 (1985)

    Article  Google Scholar 

  23. K. Wang, J. Simon, N. Goel, and D. Jena, Appl. Phys. Lett., 88, 3 (2006)

    Google Scholar 

  24. I. Vurgaftman and J.R. Meyer, J. Appl. Phys., 94, 3675 (2003)

    Article  Google Scholar 

  25. Y.P. Varshni, Physica, 34, 149 (1967)

    Article  Google Scholar 

  26. A. Matulionis, J. Liberis, I. Matulioniene, E. Sermuksnis, J.H. Leach, M. Wu, and H. Morkoc, Phys. Status Solidi A, 208, 30 (2011)

    Article  Google Scholar 

  27. B.K. Ridley, J. Phys. Condens. Mater., 8, L511 (1996)

    Article  Google Scholar 

  28. A. Matulionis, Phys. Status Solidi A, 203, 2313 (2006)

    Article  Google Scholar 

  29. S.J. Kline and F.A. McClintock, Mech. Eng., 75, 3 (1953).

    Google Scholar 

  30. D.C. Baird, Experimentation: An Introduction to Measurement Theory and Experiment Design, 2nd edn. (Prentice Hall, NJ: Englewood Cliffs, 1988), pp. 172–177.

    Google Scholar 

Download references

Acknowledgements

J.A.F.-P. is grateful for a scholarship from CONACYT-Mexico, and also expresses his gratitude to Dr. Vladimir Protasenko, Dr. Gregg Jessen, and Dr. Eric Heller for discussions and help. The work of B.C. was partially supported by AFRL Contract #FA8650-06-D-5401.

Author information

Authors and Affiliations

  1. Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA

    Jorge A. Ferrer-Pérez & Mihir Sen

  2. Air Force Research Laboratory, Sensors Directorate Wright–Patterson Air Force Base, Dayton, OH, 45433, USA

    Bruce Claflin

  3. Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA

    Debdeep Jena

  4. Defense and Power, RF Micro Devices, Inc., Charlotte, NC, 28269, USA

    Ramakrishna Vetury

  5. Materials and Manufacturing Directorate, AFRL/RXAN, Wright–Patterson Air Force Base, Dayton, OH, 45433, USA

    Donald Dorsey

Authors
  1. Jorge A. Ferrer-Pérez
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Bruce Claflin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Debdeep Jena
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Mihir Sen
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Ramakrishna Vetury
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Donald Dorsey
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Jorge A. Ferrer-Pérez.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ferrer-Pérez, J.A., Claflin, B., Jena, D. et al. Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs. J. Electron. Mater. 43, 341–347 (2014). https://doi.org/10.1007/s11664-013-2841-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-013-2841-3

Keywords

Search

Navigation