Journal of Electronic Materials

, Volume 42, Issue 7, pp 2292–2296 | Cite as

Improved Thermoelectric Properties of Se-Doped n-Type PbTe1−x Se x (0 ≤ x ≤ 1)

  • Ranita BasuEmail author
  • S. Bhattacharya
  • Ranu Bhatt
  • Ajay Singh
  • D. K. Aswal
  • S. K. Gupta


Enhancement of the thermoelectric figure of merit is of prime importance for any thermoelectric material. Lead telluride has received attention as a potential thermoelectric material. In this work, the effect of Se substitution has been systematically investigated in PbTe1−x Se x . The thermoelectric properties of synthesized alloys were measured in the temperature range of 300 K to 873 K. For the particular composition of x = 0.5, α was highest at ~292 μV/K, while k was lowest at ~0.75 W/m-K, resulting in the highest dimensionless figure of merit of ZT ≈ 0.95 at 600 K. The increase in thermopower for x = 0.5 can be attributed to the high distortion in the crystal lattice which leads to the formation of defect states. These defect states scatter the majority charge carriers, leading to high thermopower and high electrical resistivity. The dramatic reduction of the thermal conductivity for x = 0.5 can be attributed to phonon scattering by defect states.


Thermoelectric materials defects thermal conductivity 


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Copyright information

© TMS 2013

Authors and Affiliations

  • Ranita Basu
    • 1
    Email author
  • S. Bhattacharya
    • 1
  • Ranu Bhatt
    • 1
  • Ajay Singh
    • 1
  • D. K. Aswal
    • 1
  • S. K. Gupta
    • 1
  1. 1.Technical Physics DivisionBhabha Atomic Research CentreMumbaiIndia

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