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Influence of Annealing on Electrical Properties of an Organic Thin Layer-Based n-Type InP Schottky Barrier Diode

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Abstract

The electrical properties of a fabricated Au/polymethylmethacrylate (PMMA)/n-InP Schottky barrier diode have been analyzed for different annealing temperatures using current–voltage (I–V) and capacitance–voltage (C–V) techniques. It is observed that the Au/PMMA/n-InP structure shows excellent rectifying behavior. The extracted barrier height and ideality factor of the as-deposited Au/PMMA/n-InP Schottky contact are 0.68 eV (J–V)/0.82 eV (C–V) and 1.57, respectively. However, the barrier height (BH) of the Au/PMMA/n-InP Schottky contact increases to 0.78 eV (J–V)/0.99 eV (C–V) when the contact is annealed at 150°C for 1 min in nitrogen atmosphere. Upon annealing at 200°C, the BH value decreases to 0.72 eV (J–V)/0.90 eV (C–V) and the ideality factor increases to 1.48. The PMMA layer increases the effective barrier height of the structure by creating a physical barrier between the Au metal and the n-InP. Cheung’s functions are also used to calculate the series resistance of the Au/PMMA/n-InP structure. The interface state density (N ss) is found to be 6.380 × 1012 cm−2 eV−1 and 1.916 × 1012 cm−2 eV−1 for the as-deposited and 150°C-annealed Au/PMMA/n-InP Schottky contacts, respectively. These results indicate that the interface state density and series resistance have a significant effect on the electrical characteristics of Au/PMMA/n-InP Schottky barrier devices. Finally, it is noted that the diode parameters change with increasing annealing temperature.

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Authors and Affiliations

  1. Department of Physics, Sri Venkateswara University, Tirupati, 517502, India

    V. Rajagopal Reddy, A. Umapathi & S. Sankar Naik

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  1. V. Rajagopal Reddy
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  2. A. Umapathi
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  3. S. Sankar Naik
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Correspondence to V. Rajagopal Reddy.

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Rajagopal Reddy, V., Umapathi, A. & Sankar Naik, S. Influence of Annealing on Electrical Properties of an Organic Thin Layer-Based n-Type InP Schottky Barrier Diode. J. Electron. Mater. 42, 1282–1289 (2013). https://doi.org/10.1007/s11664-013-2592-1

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