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Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer Superlattices

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Abstract

The energy gaps were studied in two types of structures: unrelaxed bulk InAs1−x Sb x layers with x = 0.2 to 0.46 grown on metamorphic buffers and type II InAs1−x Sb x /InAs strained-layer superlattices (SLS) with x = 0.225 to 0.296 in the temperature range from T = 13 K to 300 K. All structures were grown on GaSb substrates. The longest wavelength of photoluminescence (PL) at low temperatures was observed from bulk InAs0.56Sb0.44 with a peak at 10.3 μm and full-width at half-maximum (FWHM) of 11 meV. The PL data for the bulk InAs1−x Sb x materials of various compositions imply an energy gap bowing parameter of 0.87 eV. A low-temperature PL peak at 9.1 μm with FWHM of 13 meV was observed for InAs0.704Sb0.296/InAs SLS. The PL spectrum of InAs0.775Sb0.225/InAs SLS under pulsed excitation revealed a second peak associated with recombination of electrons in the three-dimensional (3D) continuum with holes in the InAs0.775Sb0.225. This experiment determined the conduction-band offset in the InAs0.775Sb0.225/InAs SLS. The energies of the conduction and valence bands in unstrained InAs1−x Sb x and their bowing with respect to the Sb composition are discussed.

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Authors and Affiliations

  1. Department of ECE, Stony Brook University, Stony Brook, NY, 11794, USA

    Youxi Lin, Ding Wang, Dmitry Donetsky, Leon Shterengas, Gela Kipshidze & Gregory Belenky

  2. Army Research Laboratory, Adelphi, MD, 20783, USA

    Stefan P. Svensson, Wendy L. Sarney & Harry S. Hier

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  1. Youxi Lin
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  2. Ding Wang
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  3. Dmitry Donetsky
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Correspondence to Youxi Lin.

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Lin, Y., Wang, D., Donetsky, D. et al. Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer Superlattices. J. Electron. Mater. 42, 918–926 (2013). https://doi.org/10.1007/s11664-013-2528-9

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  • DOI: https://doi.org/10.1007/s11664-013-2528-9

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