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Nanoplasmonic Enhanced ZnO/Si Heterojunction Metal–Semiconductor–Metal Photodetectors

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Abstract

This paper presents a nanoplasmonic enhanced ZnO/Si heterojunction metal–semiconductor–metal (MSM) photodetector (PD). By depositing different thicknesses of Ag thin film and annealing at a moderate temperature, well-defined silver (Ag) nanoparticles (NPs) with different diameters, densities, and size distributions were produced on the surface of ZnO/Si MSM photodetector devices. By tuning the characteristics of these NPs, a higher-performance ZnO/Si MSM photodetector has been realized. The photocurrent of the detector with NPs was increased by 160% to 680%, depending on the applied voltage. The spectral photocurrent enhancement by a factor of 7 to 18 was broadband from 350 nm to 850 nm.

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Authors and Affiliations

  1. Department of Electrical Engineering, State University of New York at Buffalo, Buffalo, NY, 14260-1920, USA

    Chong Tong, Juhyung Yun, Eric Kozarsky & Wayne A. Anderson

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  1. Chong Tong
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  2. Juhyung Yun
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  3. Eric Kozarsky
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  4. Wayne A. Anderson
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Correspondence to Chong Tong.

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Tong, C., Yun, J., Kozarsky, E. et al. Nanoplasmonic Enhanced ZnO/Si Heterojunction Metal–Semiconductor–Metal Photodetectors. J. Electron. Mater. 42, 889–893 (2013). https://doi.org/10.1007/s11664-013-2526-y

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  • DOI: https://doi.org/10.1007/s11664-013-2526-y

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