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Ge/SiGe Superlattices for Thermoelectric Devices Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition

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Abstract

Ge/SiGe multiple quantum wells are presented as efficient material for room-temperature thermoelectric generators monolithically integrated onto silicon. We have deposited and characterized 10-μm-thick heterostructures engineered for lateral devices, in which both heat and current flow parallel to the multilayer. In this paper we investigate in detail the structural and interface quality by means of x-ray diffraction and transmission electron microscopy. Thermoelectric measurements, giving a figure of merit of 0.04 to 0.08, together with mobility spectra and defect analysis suggest possibilities of even higher efficiency. Nevertheless, the high power factor of 2 mW/K2m to 6 mW/K2m is promising for applications.

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Authors and Affiliations

  1. L-NESS Politecnico di Milano, Polo Territoriale di Como, via Anzani 42, 22100, Como, Italy

    S. Cecchi, D. Chrastina & G. Isella

  2. Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergerstrae 69, 4040, Linz, Austria

    T. Etzelstorfer & J. Stangl

  3. Electron Microscopy ETH Zurich (EMEZ), Wolfgang-Pauli-Str. 16, 8093, Zurich, Switzerland

    E. Müller

  4. School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT, UK

    A. Samarelli, L. Ferre Llin, J. M. R. Weaver, P. Dobson & D. J. Paul

Authors
  1. S. Cecchi
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  2. T. Etzelstorfer
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  3. E. Müller
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  4. A. Samarelli
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  5. L. Ferre Llin
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  6. D. Chrastina
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  7. G. Isella
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  8. J. Stangl
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  9. J. M. R. Weaver
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  10. P. Dobson
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  11. D. J. Paul
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Corresponding author

Correspondence to S. Cecchi.

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Cecchi, S., Etzelstorfer, T., Müller, E. et al. Ge/SiGe Superlattices for Thermoelectric Devices Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. J. Electron. Mater. 42, 2030–2034 (2013). https://doi.org/10.1007/s11664-013-2511-5

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  • DOI: https://doi.org/10.1007/s11664-013-2511-5

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