Abstract
V2VI3 compounds and solid solutions based on them are known to be the best low-temperature thermoelectric (TE) materials. The predicted possibility of enhancement of the TE figure of merit in two-dimensional (2D) structures has stimulated studies of the properties of these materials in the thin-film state. The goal of the present work is to study the dependences of the Seebeck coefficient S, electrical conductivity σ, Hall coefficient R H, charge carrier mobility μ H, and TE power factor P = S 2 σ of Bi2Te3 thin films on the composition of the initial bulk material used for preparing them. Thin films with thickness d = 200 nm to 250 nm were grown by thermal evaporation in vacuum of stoichiometric Bi2Te3 crystals (60.0 at.% Te) and of crystals with 62.8 at.% Te onto glass substrates at temperatures T S of 320 K to 500 K. It was established that the conductivity type of the initial material is reproduced in films fairly well. For both materials, an increase in T S leads to an increase in the thin-film structural perfection, better correspondence between the film composition and that of the initial material, and increase in S, R H, μ H, σ, and P. The room-temperature maximum values of P for the films grown from crystals with 60.0 at.% and 62.8 at.% Te are P = 7.5 × 10−4 W/K2 m and 35 × 10−4 W/K2 m, respectively. Thus, by using Bi2Te3 crystals with different stoichiometry as initial materials, one can control the conductivity type and TE parameters of the films, applying a simple and low-cost method of thermal evaporation from a single source.
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Budnik, A.V., Rogacheva, E.I., Pinegin, V.I. et al. Effect of Initial Bulk Material Composition on Thermoelectric Properties of Bi2Te3 Thin Films. J. Electron. Mater. 42, 1324–1329 (2013). https://doi.org/10.1007/s11664-012-2439-1
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DOI: https://doi.org/10.1007/s11664-012-2439-1