Characterization of Nonstoichiometric Ti1+x Se2 Prepared by the Method of Modulated Elemental Reactants
The method of modulated elemental reactants (MER) is used to prepare the layered compound Ti1+x Se2. Using a thin-film precursor prepared by sequentially depositing elemental titanium and selenium by physical vapor deposition, the binary compound is readily formed by short-duration annealing at 350°C. x-Ray diffraction indicates that TiSe2 layers in the film are highly oriented with the c-axis of the layers perpendicular to the substrate. Temperature-dependent electrical resistivity and Hall coefficient measurements for the MER-prepared specimen reveal temperature dependence that is distinct from crystalline stoichiometric TiSe2 in bulk form. The room-temperature Seebeck coefficient was measured to be −134 μV/K, which is opposite in sign and significantly larger in magnitude than stoichiometric crystalline TiSe2, suggesting that carrier transport in the disordered film is markedly different from the bulk crystalline material.
KeywordsTiSe2 thermoelectric turbostratic disorder
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