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Fabrication of Highly (0 0 l)-Textured Sb2Te3 Film and Corresponding Thermoelectric Device with Enhanced Performance

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Abstract

An approach for fabrication of highly (0 0 l)-textured Sb2Te3 thin film with layered structure by the magnetron sputtering method is reported. The composition, microstructure, and thermoelectric properties of the thin films have been characterized and measured by x-ray diffraction, scanning electron microscopy with energy-dispersive x-ray spectroscopy, and a thermoelectric (TE) measurement system, respectively. The results show that well-oriented (0 0 l) Sb2Te3 thin film with layered structure is beneficial for improvement of thermoelectric properties, being a promising choice for planar TE devices. The power generation and cooling performance of a layered p-Sb2Te3 film device are superior to those of the ordinary thin-film device. For a typical parallel device with 38 layered Sb2Te3 film elements, the output voltage, maximum power, and corresponding power density are up to 10.3 mV, 11.1 μW, and 73 mW/cm2, respectively, for a temperature difference of 76 K. The device can produce a 6.1 K maximum temperature difference at current of 45 mA. The results prove that enhanced microdevice performance can be realized by integrating (0 0 l)-oriented Sb2Te3 thin films with a layered architecture.

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Authors and Affiliations

  1. Beijing Key Laboratory of Special Functional Materials and Film, School of Materials Science and Engineering, Beihang University, Beijing, 100191, China

    Ming Tan, Yuan Deng, Yao Wang, Bingwei Luo, Lixing Liang & Lili Cao

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  1. Ming Tan
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  2. Yuan Deng
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  3. Yao Wang
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  4. Bingwei Luo
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  5. Lixing Liang
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  6. Lili Cao
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Correspondence to Yuan Deng.

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Tan, M., Deng, Y., Wang, Y. et al. Fabrication of Highly (0 0 l)-Textured Sb2Te3 Film and Corresponding Thermoelectric Device with Enhanced Performance. J. Electron. Mater. 41, 3031–3038 (2012). https://doi.org/10.1007/s11664-012-2214-3

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  • DOI: https://doi.org/10.1007/s11664-012-2214-3

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