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Unusual Rectifying Response of Nanojunctions Using Randomly Oriented Nanorods (RON) of ZnO Irradiated with 80-MeV Oxygen Ions

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The present work highlights the improved Schottky behavior of Ag/ZnO nanojunctions which make use of unirradiated and 80-MeV oxygen ion (O6+) irradiated randomly oriented ZnO nanorods. While leakage current is apparently low, the rectifying nature of the nanojunctions was clearly evident from room-temperature current–voltage (I–V) measurements. In case of use of irradiated nanorods, the Schottky barrier height (ϕ B) of the Ag/ZnO nanojunctions was found to be enhanced from 0.78 eV to 0.95 eV along with decrease of the ideality factor (η) from 17.7 to 6.9. This is ascribed to reorganization and modification of the native defect states via creation and annihilation events as revealed by photoluminescence spectroscopy. The fluence-dependent variation of ϕ B and η was assigned to competition among donor and acceptor types of defects. The current transport mechanism of the Schottky contacts was found to be dominated by trap-assisted recombination tunneling and space charge-limited conduction in the mobility and ballistic regime.

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Authors and Affiliations

  1. Nanoscience and Soft Matter Laboratory, Department of Physics, Tezpur University, PO Napaam, Tezpur, 784 028, Assam, India

    Sayan Bayan & Dambarudhar Mohanta

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  1. Sayan Bayan
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  2. Dambarudhar Mohanta
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Correspondence to Dambarudhar Mohanta.

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Bayan, S., Mohanta, D. Unusual Rectifying Response of Nanojunctions Using Randomly Oriented Nanorods (RON) of ZnO Irradiated with 80-MeV Oxygen Ions. J. Electron. Mater. 41, 1955–1961 (2012). https://doi.org/10.1007/s11664-012-1995-8

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  • DOI: https://doi.org/10.1007/s11664-012-1995-8

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