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LaAlO3/SrTiO3 Epitaxial Heterostructures by Atomic Layer Deposition

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Abstract

Thin films of LaAlO3 were deposited on TiO2-terminated (100) SrTiO3 crystals by atomic layer deposition (ALD), using tris(iso-propylcyclopentadienyl)lanthanum and trimethyl aluminum precursors. Water was used as the oxidizer. The film composition was shown to be controlled by the ratio of La/Al precursor pulses during ALD, with near-stoichiometric LaAlO3 resulting at precursor pulse ratios of 4/1 to 5/1. Films near the stoichiometric LaAlO3 composition were shown to crystallize on subsequent annealing to form epitaxial LaAlO3/SrTiO3 heterostructures. Electrical characterization of these structures was done by two-terminal direct-current (DC) current–voltage scans at room temperature and under high-vacuum conditions. The results show electrical conductivity for the ALD-deposited epitaxial LaAlO3/SrTiO3 heterostructures, which turns on for thickness above four unit cells for the LaAlO3 film.

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Authors and Affiliations

  1. Structured Materials Industries, Inc., 201 Circle Drive North, Unit #102, Piscataway, NJ, 08854, USA

    Nick M. Sbrockey, Michael Luong & Gary S. Tompa

  2. Department of Materials Science and Engineering, Drexel University, Philadelphia, PA, 19104, USA

    Eric M. Gallo, Jennifer D. Sloppy, Guannan Chen, Christopher R. Winkler, Stephanie H. Johnson, Mitra L. Taheri & Jonathan E. Spanier

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  1. Nick M. Sbrockey
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  2. Michael Luong
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Correspondence to Nick M. Sbrockey.

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Sbrockey, N.M., Luong, M., Gallo, E.M. et al. LaAlO3/SrTiO3 Epitaxial Heterostructures by Atomic Layer Deposition. J. Electron. Mater. 41, 819–823 (2012). https://doi.org/10.1007/s11664-012-1960-6

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  • DOI: https://doi.org/10.1007/s11664-012-1960-6

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