Journal of Electronic Materials

, Volume 41, Issue 3, pp 494–497 | Cite as

Low-Temperature Epitaxy of Compressively Strained Silicon Directly on Silicon Substrates

  • D. Shahrjerdi
  • B. Hekmatshoar
  • S. W. Bedell
  • M. Hopstaken
  • D. K. Sadana
Article

Abstract

We report epitaxial growth of compressively strained silicon directly on (100) silicon substrates by plasma-enhanced chemical vapor deposition. The silicon epitaxy was performed in a silane and hydrogen gas mixture at temperatures as low as 150°C. We investigate the effect of hydrogen dilution during the silicon epitaxy on the strain level by high-resolution x-ray diffraction. Additionally, triple-axis x-ray reciprocal-space mapping of the samples indicates that (i) the epitaxial layers are fully strained and (ii) the strain is graded. Secondary-ion mass spectrometry depth profiling reveals the correlation between the strain gradient and the hydrogen concentration profile within the epitaxial layers. Furthermore, heavily phosphorus-doped layers with an electrically active doping concentration of ~2 × 1020 cm−3 were obtained at such low growth temperatures.

Keywords

Low temperature epitaxial growth compressive strain heavily doped 

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Copyright information

© TMS 2011

Authors and Affiliations

  • D. Shahrjerdi
    • 1
  • B. Hekmatshoar
    • 1
  • S. W. Bedell
    • 1
  • M. Hopstaken
    • 1
  • D. K. Sadana
    • 1
  1. 1.IBM T. J. Watson Research CenterYorktown HeightsUSA

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