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HgCdTe Quantum Detection: from Long-Wave IR down to UV

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Abstract

A few years ago, visible detection was demonstrated using advanced substrate thinning processes on flip-chip hybridized HgCdTe focal-plane arrays, in both French and US laboratories. Constant quantum efficiency was demonstrated at LETI-Sofradir from the short-wave infrared (IR) (2.5 μm cut-off) down to the visible range in 2006, validating complete CdZnTe substrate removal. This paper presents and discusses HgCdTe photodiode spectral response characterization, focusing on the short-wavelength part of the spectrum. We confirm the extended sensitivity of middle- and long-wave diodes: constant quantum efficiency has been observed from 10 μm down to 230 nm in the ultraviolet (UV). Such a unique property may be useful for very large-bandwidth spectrometers requiring monolithic detectors. Avalanche gain of middle-wave avalanche photodiodes has also been investigated in both the visible and the UV range. We demonstrate here that the avalanche gain remains constant while keeping a very low excess noise factor. This result opens the way to low-flux applications in this wavelength range.

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  1. CEA LETI Minatec, 17 rue des martyrs, 38054, Grenoble Cedex 9, France

    O. Gravrand & J. Rothman

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  1. O. Gravrand
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  2. J. Rothman
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Correspondence to O. Gravrand.

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Gravrand, O., Rothman, J. HgCdTe Quantum Detection: from Long-Wave IR down to UV. J. Electron. Mater. 40, 1781–1784 (2011). https://doi.org/10.1007/s11664-011-1691-0

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  • DOI: https://doi.org/10.1007/s11664-011-1691-0

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