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Dual-Color InAs/GaSb Superlattice Focal-Plane Array Technology

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Abstract

Within a very few years, InAs/GaSb superlattice technology has proven its suitability for high-performance infrared imaging detector arrays. At the Fraunhofer Institute for Applied Solid State Physics (IAF) and AIM Infrarot-Module GmbH, efforts have been focused on developing mature fabrication technology for dual-color InAs/GaSb superlattice focal-plane arrays for simultaneous, colocated detection at 3 μm to 4 μm and 4 μm to 5 μm in the mid-wavelength infrared atmospheric transmission window. Integrated into a wide-field-of-view missile approach warning system for an airborne platform, a very low number of pixel outages and cluster defects is mandatory for bispectral detector arrays. Process refinements, intense root-cause analysis, and specific test methodologies employed at various stages during the process have proven to be the key for yield enhancements.

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Authors and Affiliations

  1. Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Tullastraße 72, 79108, Freiburg, Germany

    Robert Rehm, Martin Walther, Frank Rutz, Johannes Schmitz, Andreas Wörl & Jan-Michael Masur

  2. AIM Infrarot-Module GmbH, Theresienstraße 2, 74072, Heilbronn, Germany

    Ralf Scheibner, Joachim Wendler & Johann Ziegler

Authors
  1. Robert Rehm
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  2. Martin Walther
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  3. Frank Rutz
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  4. Johannes Schmitz
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  5. Andreas Wörl
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  6. Jan-Michael Masur
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  7. Ralf Scheibner
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  8. Joachim Wendler
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  9. Johann Ziegler
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Correspondence to Robert Rehm.

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Rehm, R., Walther, M., Rutz, F. et al. Dual-Color InAs/GaSb Superlattice Focal-Plane Array Technology. J. Electron. Mater. 40, 1738–1743 (2011). https://doi.org/10.1007/s11664-011-1674-1

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  • DOI: https://doi.org/10.1007/s11664-011-1674-1

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