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Effect of Sb Doping on the Thermoelectric Properties of Mg2Si0.7Sn0.3 Solid Solutions

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Abstract

This study focuses on Sb-doped Mg2(Si,Sn) thermoelectric material. Samples were successfully fabricated using a hybrid synthesis method consisting of three different processes: induction melting, solid-state reaction, and a hot-press sintering technique. We found that the carrier concentration increased with Sb content, while the Seebeck coefficient exhibited a decreasing trend. Sb doping was shown to improve the power factor and thermoelectric figure of merit compared with the undoped material, yielding a peak figure of merit (ZT) of ~0.55 at 620 K, while leaving the band gap of Mg2Si0.7Sn0.3 almost unchanged.

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    H. L. Gao, X. X. Liu, T. J. Zhu, S. H. Yang & X. B. Zhao

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  1. H. L. Gao
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  2. X. X. Liu
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  3. T. J. Zhu
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  4. S. H. Yang
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  5. X. B. Zhao
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Correspondence to X. B. Zhao.

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Gao, H.L., Liu, X.X., Zhu, T.J. et al. Effect of Sb Doping on the Thermoelectric Properties of Mg2Si0.7Sn0.3 Solid Solutions. J. Electron. Mater. 40, 830–834 (2011). https://doi.org/10.1007/s11664-011-1584-2

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  • DOI: https://doi.org/10.1007/s11664-011-1584-2

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