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Electrical and Optical Characterization of Melt-Grown Bulk InAs1−y P y Crystals

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Bulk ternary InAs1−y P y polycrystals with diameters up to 50 mm were grown from a pseudobinary InP-InAs melt using the vertical Bridgman technique. Electrical and optical properties were investigated as functions of alloy composition and sample temperature. As-grown undoped crystals have been found to exhibit n-type conductivity irrespective of alloy composition. Though the bulk InAs1−y P y substrates show high optical transmission out to long wavelengths as well as high carrier mobility, they exhibit random compositional fluctuations across the substrate area.

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References

  1. C. Lamberti and S. Bordiga, J. Appl. Phys. 83, 1058 (1998).

    Article  CAS  Google Scholar 

  2. W.A. Bonner, International Conference on Indium Phosphide and Related Materials, 11–15 May 1997, p. 205.

  3. G. Rajagopalan, N.S. Reddy, H. Ehsani, I.B. Bhat, P.S. Dutta, R.J. Gutmann, G. Nichols, G.W. Charache, and O. Sulima, J. Electron. Mater. 32, 1317 (2003).

    Article  CAS  Google Scholar 

  4. P.S. Dutta, Crystal Growth Technology, ed. H.J. Scheel and P. Capper (Weinheim: Wiley VCH, 2008), Chap. 12.

  5. K.J. Bachmann, F.A. Thiel, and H. Schreiber Jr., Prog. Cryst. Growth Charact. 2, 171 (1979).

    Article  CAS  Google Scholar 

  6. H. Kim, A. Chandola, R. Bhat, and P.S. Dutta, J. Cryst. Growth 289, 450 (2006).

    Article  CAS  Google Scholar 

  7. P.S. Dutta, J. Cryst. Growth 275, 106 (2005).

    Article  Google Scholar 

  8. S. Adachi, J. Appl. Phys. 53, 8775 (1982).

    Article  CAS  Google Scholar 

  9. S. Adachi and K. Oe, J. Appl. Phys. 56, 74 (1984).

    Article  CAS  Google Scholar 

  10. M.W. Wanlass, AIP Conf. Proc., 6th Conf. of Thermophotovoltaic Generation of Electricity, vol. 738 (2004), p. 427.

  11. R. Bhat, P.S. Dutta, and S. Guha, J. Cryst. Growth 310, 1910 (2008).

    Article  CAS  Google Scholar 

  12. S. Adachi, Phys. Rev. B 39, 12612 (1989).

    Article  CAS  Google Scholar 

  13. S.M. Kelso, D.E. Aspnes, M.A. Pollack, and R.E. Nahory, Phys. Rev. B 26, 6669 (1982).

    Article  CAS  Google Scholar 

  14. R.E. Nahory, M.A. Pollack, and W.D. Johnston, J. Appl. Phys. Lett. 33, 659 (1978).

    Article  CAS  Google Scholar 

  15. A. Chandola, H.J. Kim, S. Guha, L. Gonzalez, V. Kumar, and P.S. Dutta, J. Appl. Phys. 98, 093103 (2005).

    Article  Google Scholar 

  16. H. Kim, A. Chandola, S. Guha, L. Gonzalez, V. Kumar, and P.S. Dutta, J. Electron. Mater. 34, 1391 (2005).

    Article  CAS  Google Scholar 

  17. A. Chandola, R. Pino, and P.S. Dutta, Semicond. Sci. Technol. 20, 886 (2005).

    Article  CAS  Google Scholar 

  18. R. Pino, Y. Ko, and P.S. Dutta, Int. J. High Speed Electron. Syst. 14, 658 (2004).

    Article  CAS  Google Scholar 

  19. R. Pino, Y. Ko, and P.S. Dutta, J. Appl. Phys. 96, 1064 (2004).

    Article  CAS  Google Scholar 

  20. R. Pino, Y. Ko, and P.S. Dutta, J. Electron. Mater. 33, 1012 (2004).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson Air Force Base, OH, 45433, USA

    J. Wei, J. Barnes, S. Guha & L. P. Gonzalez

  2. General Dynamics Information Technology, 5100 Springfield Street, Dayton, OH, 45431, USA

    J. Wei & J. Barnes

  3. Department of Engineering Physics, Air Force Institute of Technology, Wright Patterson Air Force Base, OH, 45433, USA

    J. Wei, Y. K. Yeo & R. L. Hengehold

  4. United Semiconductors, LLC, 7 University Place, Rensselaer, NY, 12144, USA

    G. Rajagopalan

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  1. J. Wei
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  2. J. Barnes
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  3. S. Guha
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  4. L. P. Gonzalez
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  5. Y. K. Yeo
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  6. R. L. Hengehold
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  7. G. Rajagopalan
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Correspondence to Y. K. Yeo.

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The views expressed in this article are those of the authors and do not reflect the official policy or position of the United States Air Force, Department of Defense, or the United States Government.

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Wei, J., Barnes, J., Guha, S. et al. Electrical and Optical Characterization of Melt-Grown Bulk InAs1−y P y Crystals. J. Electron. Mater. 40, 103–108 (2011). https://doi.org/10.1007/s11664-010-1432-9

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  • DOI: https://doi.org/10.1007/s11664-010-1432-9

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