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Investigation and Effects of Wafer Bow in 3D Integration Bonding Schemes

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Abstract

This paper investigates and reviews the effects of wafer bow in three- dimensional (3D) integration bonding schemes, including copper wafer bonding and oxide fusion wafer bonding with silicon on insulator (SOI)-based layer transfer technology. Wafer bow criteria for good bonding quality and fabrication techniques to minimize wafer bow are introduced for 3D integration technology and applications.

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Authors and Affiliations

  1. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan

    K. N. Chen

  2. IBM T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA

    Y. Zhu

  3. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan

    W. W. Wu

  4. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    R. Reif

Authors
  1. K. N. Chen
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  2. Y. Zhu
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  3. W. W. Wu
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  4. R. Reif
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Correspondence to K. N. Chen or W. W. Wu.

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Chen, K.N., Zhu, Y., Wu, W.W. et al. Investigation and Effects of Wafer Bow in 3D Integration Bonding Schemes. J. Electron. Mater. 39, 2605–2610 (2010). https://doi.org/10.1007/s11664-010-1341-y

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  • DOI: https://doi.org/10.1007/s11664-010-1341-y

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