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Room-Temperature Preparation of High-Transparency Low-Resistivity ITO Films by Ion Beam Sputtering

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Abstract

Low-temperature preparation of transparent conducting electrodes is essential for flexible optoelectronic devices. Tin-doped In2O3 films with high transparency and low electrical resistance were prepared at room temperature using a radiofrequency ion beam sputtering system. Specimens with a low sheet resistivity of 10−4 Ω cm and a high visible-light transmittance of 85% to 90% were obtained. Hall measurements were used to determine mobility and carrier concentration, and the effects on resistivity are discussed.

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Authors and Affiliations

  1. Department of Materials and Optoelectronic Science; Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan, R.O.C

    Jung-Hsiung Shen, Sung-Wei Yeh & Dershin Gan

  2. Department of Mold and Die Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung, 80778, Taiwan, R.O.C

    Koho Yang

  3. Department of Mechanical Engineering, R.O.C. Military Academy, Kaohsiung, 83059, Taiwan, R.O.C

    Hsing-Lu Huang & Shih-Wei Mao

Authors
  1. Jung-Hsiung Shen
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  2. Sung-Wei Yeh
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  3. Dershin Gan
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  4. Koho Yang
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  5. Hsing-Lu Huang
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  6. Shih-Wei Mao
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Correspondence to Shih-Wei Mao.

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Shen, JH., Yeh, SW., Gan, D. et al. Room-Temperature Preparation of High-Transparency Low-Resistivity ITO Films by Ion Beam Sputtering. J. Electron. Mater. 39, 2352–2358 (2010). https://doi.org/10.1007/s11664-010-1328-8

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  • DOI: https://doi.org/10.1007/s11664-010-1328-8

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