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Void Growth Behavior in ULSI Cu Interconnections by Grain-Boundary Diffusion Simulation

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Abstract

The behavior of void growth in ultra-large-scale integration Cu interconnections has been investigated by grain-boundary diffusion simulation to confirm the effectiveness of the high-pressure reflow process for suppressing stress-induced voiding. Void growth was simulated by combining stress analysis and atomic flux analysis. The former was calculated by the finite-element method (FEM), and the latter was calculated by an unusual FEM in which grain boundaries were defined as elements. From the results of void growth analysis, we found that voids tend to disappear during the isochronal annealing step and that the void shrinkage rate can be increased by two to three times by applying pressure of 150 MPa compared with normal-pressure annealing. From the simulation results, it can be conjectured that the high-pressure reflow process is effective for eliminating voids in via holes of Cu interconnections.

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Acknowledgements

The authors wish to express their thanks to Professor T. Kitamura at Kyoto University for his useful advice and providing the calculation software for this work.

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Authors and Affiliations

  1. Technical Development Group, Materials Research Laboratory, Kobe Steel, Ltd., 5-5, Takatsukadai 1-chome, Nishi-ku, Kobe, 651-2271, Japan

    Takashi Onishi & Masao Mizuno

  2. Machinery & Engineering Company, Kobe Steel, Ltd., 2-3-1, Shinhama, Arai-cho, Takasago, 676-8670, Japan

    Tetsuya Yoshikawa & Jun Munemasa

  3. Kobelco Research Institute Inc., 5-5, Takatsukadai 1-chome, Nishi-ku, Kobe, 651-2271, Japan

    Takao Inoue, Aki Miyagaki & Hisashi Nakamoto

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  1. Takashi Onishi
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  2. Masao Mizuno
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  3. Tetsuya Yoshikawa
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  4. Jun Munemasa
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  5. Takao Inoue
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  6. Aki Miyagaki
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  7. Hisashi Nakamoto
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Correspondence to Takashi Onishi.

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Onishi, T., Mizuno, M., Yoshikawa, T. et al. Void Growth Behavior in ULSI Cu Interconnections by Grain-Boundary Diffusion Simulation. J. Electron. Mater. 39, 2255–2266 (2010). https://doi.org/10.1007/s11664-010-1311-4

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  • DOI: https://doi.org/10.1007/s11664-010-1311-4

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