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Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron Spectroscopy

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The surface quality of as-etched and ammonium sulfide [(NH4)2S]-treated samples of an indium arsenide/gallium antimonide (InAs/GaSb) superlattice structure were compared using x-ray photoelectron spectroscopy (XPS). After short exposure to the atmosphere following passivation, treated samples displayed a complete absence or significant reduction of native oxides compared with untreated samples, confirming better quality of surface passivation. However, extensive sulfidization was not observed, and after extended exposure, the native oxides reappeared on the treated surface, establishing the need for a capping layer for long-term passivation stability. The surface study provides definitive confirmation of previous results on electrical properties of photodetectors fabricated on InAs/GaSb superlattices.

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References

  1. R. Tsu, L. Esaki, and B.A. Sai-Halasz, Appl. Phys. Lett. 30, 651 (1977).

    Article  ADS  Google Scholar 

  2. H.H. Wieder, J. Vac. Sci. Technol. 15, 1498 (1978).

    Article  CAS  ADS  Google Scholar 

  3. G.P. Schwartz, G.J. Gualtieri, J.E. Griffiths, C.D. Thurmond, and B. Schwartz, J. Electrochem. Soc. 127, 2488 (1980).

    Article  CAS  Google Scholar 

  4. D.Y. Petrovykh, M.J. Yang, and L.J. Whitman, Surf. Sci. 523, 231 (2003).

    Article  CAS  ADS  Google Scholar 

  5. M. Perotin, P. Coudray, L. Gouskov, H. Luquet, C. Linares, J.J. Bonnet, L. Soonckindt, and B. Lambert, J. Electron. Mater. 23, 7 (1994).

    Article  CAS  ADS  Google Scholar 

  6. H. Oigawa, J.F. Fan, Y. Nannichi, H. Sugahara, and M. Osofhima, Jpn. J. Appl. Phys. 30, L322 (1991).

    Article  CAS  ADS  Google Scholar 

  7. P.S. Dutta, K.S. Sangunni, H.L. Bhat, and V. Kumar, Appl. Phys. Lett. 65, 1695 (1994).

    Article  CAS  ADS  Google Scholar 

  8. S. Basu and P. Barman, J. Vac. Sci. Technol. B 10, 1078 (1992).

    Article  CAS  Google Scholar 

  9. Z.Y. Liu, A.A. Gokhale, M. Mavrikakis, D.S. Saulys, and T.F. Kuech, J. Appl. Phys. 96, 4302 (2004).

    Article  CAS  ADS  Google Scholar 

  10. A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, M. Razeghi, and M. Tidrow, Appl. Phys. Lett. 84, 2037 (2004).

    Article  CAS  ADS  Google Scholar 

  11. J. Hoffmann, T. Lehnert, D. Hoffmann, and H. Fouckhardt, Semicond. Sci. Tech. 24, 065008 (2009).

    Article  ADS  Google Scholar 

  12. S. Mou, J.V. Li, and S.L. Chuang, J. Appl. Phys. 102, 066103 (2007).

    Article  ADS  Google Scholar 

  13. K. Banerjee, S. Ghosh, S. Mallick, E. Plis, and S. Krishna, J. Electron. Mater. 38, 1944 (2009).

    Article  CAS  ADS  Google Scholar 

  14. S. Mallick, K. Banerjee, J.B. Rodriguez, S. Krishna, and S. Ghosh, Appl. Phys. Lett. 91, 241111 (2007).

    Article  ADS  Google Scholar 

  15. J. Li, S. Chuang, O. Sulima, and J. Cox, J. Appl. Phys. 97, 104506 (2005).

    Article  ADS  Google Scholar 

  16. M.R. Ravi, A. Dasgupta, and N. Dasgupta, IEEE Trans. Electron. Dev. 50, 532 (2003).

    Article  CAS  ADS  Google Scholar 

  17. P.S. Dutta, J. Langer, V. Bhagwat, and J. Juneja, Proc. SPIE 5783, 98 (2005).

    Article  CAS  ADS  Google Scholar 

  18. W.S. Hobson, F. Ren, U. Mohideen, R.E. Slusher, M.L. Schnoes, and S.J. Pearton, J. Vac. Sci. Technol. A 13, 642 (1995).

    Article  CAS  ADS  Google Scholar 

  19. NIST X-ray Photoelectron Spectroscopy Database, Version 3.5, http://srdata.nist.gov/xps/ (2003).

  20. X. Zhang, A.Z. Li, C. Lin, Y.L. Zheng, G.Y. Xu, M. Qi, and Y.G. Zhang, J. Cryst. Growth 251, 782 (2003).

    Article  CAS  ADS  Google Scholar 

  21. N.C. Norman, Periodicity and the s- and p-Block Elements (Oxford: Oxford University Press, 1997).

    Google Scholar 

  22. R.G. Pearson, Chemical Hardness–Applications from Molecules to Solids (Weinheim: Wiley-VCH, 1997).

    Google Scholar 

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Authors and Affiliations

  1. Laboratory for Photonics and Magnetics (ECE Department), University of Illinois, Chicago, 851 S. Morgan Street, Chicago, IL, 60607, USA

    Koushik Banerjee & Siddhartha Ghosh

  2. Center for High Technology Materials (ECE Department), University of New Mexico, 1313, Goddard Street SE, MSC04 2710, Albuquerque, NM, 87106, USA

    Elena Plis & Sanjay Krishna

Authors
  1. Koushik Banerjee
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  2. Siddhartha Ghosh
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  3. Elena Plis
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  4. Sanjay Krishna
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Correspondence to Koushik Banerjee.

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Banerjee, K., Ghosh, S., Plis, E. et al. Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron Spectroscopy. J. Electron. Mater. 39, 2210–2214 (2010). https://doi.org/10.1007/s11664-010-1298-x

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  • DOI: https://doi.org/10.1007/s11664-010-1298-x

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