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Single-Crystalline Silicon Layer Transfer to a Flexible Substrate Using Wafer Bonding

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Abstract

This paper reports the successful transfer of a thin single-crystalline silicon film to a flexible, transparent polymer substrate. Thin-film silicon on polymer was realized by bonding a silicon-on-insulator (SOI) wafer to a flexible substrate using a spin-on polymer as an adhesive. The SOI wafer was thinned by a grinding operation followed by chemical mechanical polishing (CMP). The SOI was further thinned to the buried oxide using wet etchants. The residual stress in the transferred substrate was investigated by ultraviolet (UV) micro-Raman spectroscopy and numerical modeling. Both approaches showed that a low level of stress was created at the bonded interface during the layer transfer.

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Acknowledgements

This work is partially supported by Science Foundation Ireland Grant 07/IN.1/1937: Low-Temperature Wafer Bonding for Heterogeneous Integration.

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Authors and Affiliations

  1. Tyndall National Institute, University College Cork, Dyke Parade, Cork, Ireland

    Ki Yeol Byun, Isabelle Ferain & Cindy Colinge

  2. Department of Electrical and Electronic Engineering, California State University, Sacramento, Sacramento, CA, 95819, USA

    Scott Song & Cindy Colinge

  3. Department of Mechanical Engineering, California State University, Sacramento, Sacramento, CA, 95819, USA

    Susan Holl

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  1. Ki Yeol Byun
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  2. Isabelle Ferain
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  3. Scott Song
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  4. Susan Holl
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  5. Cindy Colinge
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Correspondence to Ki Yeol Byun.

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Byun, K.Y., Ferain, I., Song, S. et al. Single-Crystalline Silicon Layer Transfer to a Flexible Substrate Using Wafer Bonding. J. Electron. Mater. 39, 2233–2236 (2010). https://doi.org/10.1007/s11664-010-1264-7

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  • DOI: https://doi.org/10.1007/s11664-010-1264-7

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