A device fabrication and measurement method utilizing a SiO2–SiO2 covalent bonding technique is presented for high-temperature thermoelectric characterization of thin-film III–V semiconductor materials that suffer from the side-effect of substrate conduction at high temperatures. The proposed method includes complete substrate removal, high-temperature surface passivation, and metallization with a Ti-W-N diffusion barrier. A thermoelectric material, thin-film ErAs:InGaAlAs metal/semiconductor nanocomposite grown on a lattice-matched InP substrate by molecular beam epitaxy, was transferred onto a sapphire substrate using the oxide bonding technique at 300°C, and its original InP substrate, which is conductive at high temperatures, was removed. Electrical conductivities and Seebeck coefficients were measured from room temperature to 840 K for this material on both the InP and sapphire substrates, and the measurement results clearly show that the InP substrate effect was eliminated for the sample on the sapphire substrate. A strain experiment has been conducted to investigate the effect of strain on electrical conductivity.
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G.J. Snyder and E.S. Toberer, Nat. Mater. 7, 105 (2008).
M.S. Dresselhaus, G. Chen, M.Y. Tang, R.G. Yang, H. Lee, D.Z. Wang, Z.F. Ren, J.-P. Fleurial, and P. Gogna, Adv. Mater. 19, 1043 (2007).
National Research Council (U.S.). Materials for high temperature semiconductor devices. (Washington, DC: National Academy Press, 1995).
A. Goetzberger, C. Hebling, and H.-W. Schock, Mater. Sci. Eng. R-Rep. 40, 1 (2003).
W. Kim, J.M.O. Zide, A.C. Gossard, D. Klenov, S. Stemmer, A. Shakouri, and A. Majumdar, Phys. Rev. Lett. 96, 045901 (2006).
M. Zebarjadi, K. Esfarjani, A. Shakouri, Z. Bian, J.-H. Bahk, G. Zeng, J. Bowers, H. Lu, J. Zide, and A. Gossard, J. Electron. Mater. 38, 954 (2009).
M. Zebarjadi, K. Esfarjani, A. Shakouri, J.-H. Bahk, Z. Bian, G. Zeng, J. Bowers, H. Lu, J. Zide, and A. Gossard, Appl. Phys. Lett. 94, 202105 (2009).
G. Zeng, J.-H. Bahk, J.E. Bowers, J.M.O. Zide, A.C. Gossard, Z. Bian, R. Singh, Z. Bian, A. Shakouri, W. Kim, S. Singer, and A. Majumdar, Appl. Phys. Lett. 91, 263510 (2007).
G. Zeng, J.-H. Bahk, J.E. Bowers, H. Lu, J.M.O. Zide, A.C. Gossard, R. Singh, Z. Bian, A. Shakouri, S.L. Singer, W. Kim, and A. Majumdar, J. Electron. Mater. 37, 1786 (2008).
D.C. Driscoll, M.P. Hanson, E. Mueller, and A.C. Gossard, J. Cryst. Growth 251, 243 (2003).
J.M. Zide, D.O. Klenov, S. Stemmer, A. Gossard, G.H. Zeng, J.E. Bowers, D. Vashaee, and A. Shakouri, Appl. Phys. Lett. 87, 112102 (2005).
D.O. Klenov, D.C. Driscoll, A.C. Gossard, and S. Stemmer, Appl. Phys. Lett. 86, 111912 (2005).
D. Liang, A.W. Fang, H. Park, T.E. Reynolds, K. Warner, D.C. Oakley, and J.E. Bowers, J. Electron. Mater. 37, 1552 (2008).
Q.Y. Tong and U. Gösele, Semiconductor Wafer Bonding: Science and Technology (New York: Wiley, 1998).
N.J. Kadhim and D. Mukherjee, J. Mater. Sci. Lett. 18, 229 (1999).
L.J. Van der Pauw, Philips Res. Rep. 13, 1 (1958).
S.H. Lee, I. Lee, and J. Yi, Surf. Coat. Technol. 153, 67 (2002).
M. Medjdoub, J.L. Courant, H. Maher, and G. Post, Mater. Sci. Eng. B 80, 252 (2001).
J. Mort and F. Jansen, Plasma Deposited Thin Films (Boca Raton: CRC, 1986), p. 135.
A.V. Kuchuk, V.P. Kladko, V.F. Machulin, A. Piotrowska, E. Kaminska, K. Golaszewska, R. Ratajczak, and R. Minikayev, Rev. Adv. Mater. Sci. 8, 22 (2004).
L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits, App. 11 (New York: Wiley-Interscience, 1995)
E. Suhir, J. Appl. Mech. 53, 657 (1986).
Acknowledgements
The authors are grateful to Dr. Chris Palmstrøm and Dr. Mihal Gross for their helpful discussions. This work is supported by the ONR MURI Thermionic Energy Conversion Center.
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Open Access This is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License (https://creativecommons.org/licenses/by-nc/2.0), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
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Bahk, JH., Zeng, G., Zide, J.M.O. et al. High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding. J. Electron. Mater. 39, 1125–1132 (2010). https://doi.org/10.1007/s11664-010-1258-5
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DOI: https://doi.org/10.1007/s11664-010-1258-5