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Effect on Ordering of the Growth of GaInP Layers on (111)-GaAs Faces

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Abstract

GaInP, an essential material for multijunction structures of III–V compounds for solar cells, can achieve better photovoltaic responses when grown on (111)GaAs faces, due to the large internal electric fields generated by the off-diagonal strain. In this work, we explored metalorganic chemical vapor deposition growth of GaInP layers on (001)-, (111)Ga-, and (111)As-GaAs substrates, using different phosphine flow rates. The structural and optical properties of the layers have been studied by micro-Raman spectroscopy, microphotoluminescence, and cathodoluminescence. Problems such as composition control, growth rate, and the presence of ordered phases are addressed.

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Acknowledgements

The Spanish group of authors acknowledges the financial support from the Junta de Castilla y León (GE-202) and “Grupo Pevafersa.” Special thanks are due to M. Avella (Fundación Parque Científico, Universidad de Valladolid) for the SE images.

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Authors and Affiliations

  1. GdS-Optronlab, Dpto. Física de la Materia Condensada, Edificio I+D, Paseo de Belén 1, 47011, Valladolid, Spain

    O. Martínez, V. Hortelano & J. Jiménez

  2. Grupo Pevafersa, Avd. Vicente Fernández Manso, 49800, Toro (Zamora), Spain

    V. Parra

  3. IMEM-CNR, viale Usberti 37/A, 43100, Parma, Italy

    C. Pelosi & G. Attolini

  4. Instituto de Ciencias, BUAP, Apartado Postal 207, 72000, Puebla, Mexico

    T. Prutskij

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  1. O. Martínez
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  2. V. Hortelano
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  3. J. Jiménez
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  4. V. Parra
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  5. C. Pelosi
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  6. G. Attolini
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  7. T. Prutskij
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Correspondence to O. Martínez.

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Martínez, O., Hortelano, V., Jiménez, J. et al. Effect on Ordering of the Growth of GaInP Layers on (111)-GaAs Faces. J. Electron. Mater. 39, 671–676 (2010). https://doi.org/10.1007/s11664-010-1178-4

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  • DOI: https://doi.org/10.1007/s11664-010-1178-4

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