Selective-area growth (SAG) based on plasma-assisted molecular-beam epitaxy (PAMBE) was shown to facilitate improvement of Ohmic contacts and direct-current (DC) characteristics for GaN-based field-effect transistors (FETs) over the widely accepted ion-implantation technique. Twofold improvements in breakdown voltage were also demonstrated for samples grown on both sapphire and silicon substrates. An AlGaN/GaN high-electron-mobility transistor (HEMT) fabricated with PAMBE-SAG exhibited a low specific contact resistivity of 5.86 × 10−7 Ω cm2, peak drain current of 420 mA/mm, and high breakdown voltage of 77 V. These results demonstrate that PAMBE-SAG is suited to fabricating HEMTs for high-power applications.
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This work was supported in part by the Research Board and Grainger Center for Electric Machinery and Electromechanics of the University of Illinois and Northrop-Grumman Space Technologies. Some of the MOCVD AlGaN/GaN templates used in this work were provided by Kyungpook National University, Korea, for which we thank Mr. Ki-Won Kim and Prof. Jung-Hee Lee. Assistance of Dane Sievers and Vincent Dorgan in the I–V measurements is gratefully acknowledged.
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Pang, L., Seo, H., Chapman, P. et al. Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation. Journal of Elec Materi 39, 499–503 (2010). https://doi.org/10.1007/s11664-010-1139-y
- Gallium nitride
- Ohmic contact
- breakdown voltage
- selective-area growth
- plasma-assisted molecular-beam epitaxy