Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation

Abstract

Selective-area growth (SAG) based on plasma-assisted molecular-beam epitaxy (PAMBE) was shown to facilitate improvement of Ohmic contacts and direct-current (DC) characteristics for GaN-based field-effect transistors (FETs) over the widely accepted ion-implantation technique. Twofold improvements in breakdown voltage were also demonstrated for samples grown on both sapphire and silicon substrates. An AlGaN/GaN high-electron-mobility transistor (HEMT) fabricated with PAMBE-SAG exhibited a low specific contact resistivity of 5.86 × 10−7 Ω cm2, peak drain current of 420 mA/mm, and high breakdown voltage of 77 V. These results demonstrate that PAMBE-SAG is suited to fabricating HEMTs for high-power applications.

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References

  1. 1.

    J.C. Zolper, H.H. Tan, J.S. Williams, J. Zou, D.J.H. Cockayne, S.J. Pearton, M. Hagerott Crawford, and R.F. Karlicek Jr., Appl. Phys. Lett. 70, 2729 (1997).

    Article  CAS  ADS  Google Scholar 

  2. 2.

    D. Qiao, Z.F. Guan, J. Carlton, S.S. Lau, and G.J. Sullivan, Appl. Phys. Lett. 74, 2652 (1999).

    Article  CAS  ADS  Google Scholar 

  3. 3.

    S.O. Kucheyev, J.S. Williams, and S.J. Pearton, Mater. Sci. Eng. 33, 51 (2001).

    Article  Google Scholar 

  4. 4.

    D.-F. Wang, F. Shiwei, C. Lu, A. Motayed, M. Jah, and S. Noor Mohammad, J. Appl. Phys. 89, 6214 (2001).

    Article  CAS  ADS  Google Scholar 

  5. 5.

    Y. Irokawa, O. Fujishima, T. Kachi, and Y. Nakano, J. Appl. Phys. 97, 083505 (2005).

    Article  ADS  Google Scholar 

  6. 6.

    M. Satoh, N. Itoh, K. Nomoto, T. Nakamura, and T. Mishima, Phys. Stat. Sol. (c) 4, 2621 (2007).

    Article  CAS  Google Scholar 

  7. 7.

    F. Recht, L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, J.S.. Speck, and U.K. Mishra, IEEE Electron. Dev. Lett. 27, 205 (2006).

    Article  CAS  ADS  Google Scholar 

  8. 8.

    H.H. Tan, J.S. Williams, J. Zou, D.J.H. Cockayne, S.J. Pearton, J.C. Zolper, and R.A. Stall, Appl. Phys. Lett. 72, 1190 (1998).

    Article  CAS  ADS  Google Scholar 

  9. 9.

    S.J. Hong and K.K. Kim, Appl. Phys. Lett. 89, 042101 (2006).

    Article  ADS  Google Scholar 

  10. 10.

    H.-C. Seo, P. Chapman, H.-I. Cho, J.-H. Lee, and K.K. Kim, Appl. Phys. Lett. 93, 102102 (2008).

    Article  ADS  Google Scholar 

  11. 11.

    H. Kambayashi, Y. Niiyama, S. Ootomo, T. Nomura, M. Iwami, Y. Satoh, S. Kato, and S. Yoshida, IEEE Electron. Device Lett. 28, 1077 (2007).

    Article  CAS  ADS  Google Scholar 

  12. 12.

    M.J. Uren, K.J. Nash, R.S. Balmer, T. Martin, E. Morvan, N. Caillas, S.L. Delage, D. Ducatteau, B. Grimbert, and J.C. De Jaeger, IEEE Trans. Electron. Dev. 53, 395 (2006).

    Article  CAS  ADS  Google Scholar 

  13. 13.

    E. Bahat-Treidel, O. Hilt, F. Brunner, J. Würfl, and G. Tränkle, IEEE Trans. Electron. Dev. 55, 3354 (2008).

    Article  CAS  ADS  Google Scholar 

  14. 14.

    W.S. Tan, M.J. Uren, P.A. Houston, R.T. Green, R.S. Balmer, and T. Martin, IEEE Electron. Device Lett. 27, 1 (2006).

    Article  CAS  ADS  Google Scholar 

  15. 15.

    S. Yagi, M. Shimizu, H. Okumura, H. Ohashi, Y. Yano, and N. Akutsu, Jpn. J. Appl. Phys. 46, 2309 (2007).

    Article  CAS  ADS  Google Scholar 

  16. 16.

    D. Song, J. Liu, Z. Cheng, W.C.-W. Tang, K.M. Lau, and K.J. Chen, Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs (2007).

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Acknowledgements

This work was supported in part by the Research Board and Grainger Center for Electric Machinery and Electromechanics of the University of Illinois and Northrop-Grumman Space Technologies. Some of the MOCVD AlGaN/GaN templates used in this work were provided by Kyungpook National University, Korea, for which we thank Mr. Ki-Won Kim and Prof. Jung-Hee Lee. Assistance of Dane Sievers and Vincent Dorgan in the IV measurements is gratefully acknowledged.

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Correspondence to Kyekyoon (Kevin) Kim.

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Pang, L., Seo, H., Chapman, P. et al. Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation. Journal of Elec Materi 39, 499–503 (2010). https://doi.org/10.1007/s11664-010-1139-y

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Keywords

  • Gallium nitride
  • Ohmic contact
  • breakdown voltage
  • selective-area growth
  • plasma-assisted molecular-beam epitaxy