Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO2/SiC structure was annealed at 1350°C in 10−5 Torr; the SiO2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10−5 Torr.
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REFERENCES
A.K. Geim, and K.S. Novoselov, Nat. Mater. 7, 183 (2007). doi:10.1038/nmat1849.
C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A.N. Marchenkov, E.H. Conrad, P.N. First, and W.A. de Heer, Science 312, 1191 (2006). doi:10.1126/science.1125925.
M. Kusunoki, J. Shibata, M. Rokkaku, and T. Hirayama, Jpn. J. Appl. Phys. 37, L605 (1998). doi:10.1143/JJAP.37.L605.
M. Kusunoki, T. Suzuki, T. Hirayama, and N. Shibata, Appl. Phys. Lett. 77, 531(2000). doi:10.1063/1.127034.
M. Kusunoki, T. Suzuki, T. Hirayama, and N. Shibata, Physica B 323, 296 (2002). doi:10.1016/S0921-4526(02)01027-X.
M. Kusunoki, T. Suzuki, C. Honjo, T. Hirayama, and N. Shibata, Chem. Phys. Lett. 366, 458 (2002). doi:10.1016/S0009-2614(02)01463-X.
H. Watanabe, Y. Hisada, S. Mukainakano, and N. Tanaka, J. Microsc. 203, 40 (2001). doi:10.1046/j.1365-2818.2001.00902.x.
T. Nagano, Y. Ishikawa, and N. Shibata, Jpn. J. Appl. Phys. 42, 1380 (2003). doi:10.1143/JJAP.42.1380.
T. Nagano, Y. Ishikawa, and N. Shibata, Jpn. J. Appl. Phys. 42, 1717 (2003). doi:10.1143/JJAP.42.1717.
Z.G. Cambaz, G. Yushin, S. Osswald, V. Mochalin, and Y. Gogotsi, Carbon 46, 841 (2008). doi:10.1016/j.carbon.2008.02.013.
D. Graf, F. Molitor, K. Ensslin, C. Stampfer, A., Jungen, C. Hierold, and L. Wirtz, Nano Lett. 7, 238 (2007). doi:10.1021/nl061702a.
A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K.S. Novoselov, S. Royh, and A.K. Geim, Phys. Rev. Lett. 97, 187401 (2006). doi:10.1103/PhysRevLett.97.187401.
A.C. Ferrari, Solid State Commun. 143, 7 (2007). doi:10.1016/j.ssc.2007.03.052.
Z.H. Ni, W. Chen, X.F. Fan, J.L. Kuo, T. Yu, A.T. Wee, and Z.X. Shen, Phys. Rev. B 77, 115416 (2008). doi:10.1103/PhysRevB.77.115416.
T. Seyller, K.V. Emtsev, K. Gao, F. Speck, L. Ley, A. Tadich, L. Broekman, J.D. Riley, R.C.G. Leckey, O. Rader, A. Varykhalov, and A.M. Shikin, Surf. Sci. 600, 3906 (2006). doi:10.1016/j.susc.2006.01.102.
L.I. Johansson, F. Owman, and P. Mårtensson, Phys. Rev. B 53, 793 (1996).
N. Sieber, T. Seyller, L. Ley, D. James, J.D. Riley, and R.C.G. Leckey, Phys. Rev. B 67, 205304 (2003). doi:10.1103/PhysRevB.67.205304.
J. Harrison, S.N Sambandam, J.J. Boeckl, W.C. Mitchel, W.E Collins, and W. Lu, J. Appl. Phys. 101, 104311 (2007). doi:10.1063/1.2732547.
W. Lu, J. Boeckl, W.C. Mitchel, J. Rigueur, and W.E. Collins, Mater. Sci. Forum 527–529, 1575 (2006). doi:10.4028/0-87849-425-1.1575.
T. Maruyama, H. Bang, N. Fujita, Y. Kawamura, S. Nartisuka, and M. Kusunoki, Diam. Relat. Mater. 16, 1078 (2007). doi:10.1016/j.diamond.2007.01.004.
X. Ning, and K.P. Loh, Appl. Phys. Lett. 77, 3361 (2000). doi:10.1063/1.1328050.
B. An, S. Fukuyama, and K. Yokogawa, Jpn. J. Appl. Phys. 41, 4890 (2002). doi:10.1143/JJAP.41.4890.
Y.Q. Wu, P.D. Ye, M.A. capano, Y. Xuan, Y. Sui, M. Qi, J.A. Cooper, T. Shen, D. Pandey, G. Prakash, and R. Reifenberger, Appl. Phys. Lett. 92, 092102 (2008). doi:10.1063/1.2889959.
T. Yamauchi, T. Tokunaga, M. Naitoh, S. Nishigaki, N. Toyama, F. Shoji, and M. Kusunoki, Surf. Sci. 600, 4077 (2006). doi:10.1016/j.susc.2006.01.125.
ACKNOWLEDGEMENTS
The authors at Fisk University acknowledge support from Army Research Office (ARO) (W911NF-05-1-0460, the program manger, Dr. Charles Lee, at Air Force Office of Scientific Research (AFOSR)) and National Science Foundation (NSF) through the Center of Physics and Chemistry of Materials (HRD-0420516), and the Air Force Research Laboratory (AFRL) personnel acknowledge the support of AFOSR (Dr. Donald Silversmith). W. Lu acknowledges support from the Air Force Research Laboratory as a visiting scientist in the summer, 2007, through the Universal Technology Corporation (07-T583-004-C1). The authors thank Mr. David C. Liptak at AFRL for assistance with the Raman measurements.
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Lu, W., Mitchel, W., Boeckl, J. et al. Growth of Graphene-Like Structures on an Oxidized SiC Surface. J. Electron. Mater. 38, 731–736 (2009). https://doi.org/10.1007/s11664-009-0715-5
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DOI: https://doi.org/10.1007/s11664-009-0715-5