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Growth of Graphene-Like Structures on an Oxidized SiC Surface

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Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO2/SiC structure was annealed at 1350°C in 10−5 Torr; the SiO2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10−5 Torr.

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ACKNOWLEDGEMENTS

The authors at Fisk University acknowledge support from Army Research Office (ARO) (W911NF-05-1-0460, the program manger, Dr. Charles Lee, at Air Force Office of Scientific Research (AFOSR)) and National Science Foundation (NSF) through the Center of Physics and Chemistry of Materials (HRD-0420516), and the Air Force Research Laboratory (AFRL) personnel acknowledge the support of AFOSR (Dr. Donald Silversmith). W. Lu acknowledges support from the Air Force Research Laboratory as a visiting scientist in the summer, 2007, through the Universal Technology Corporation (07-T583-004-C1). The authors thank Mr. David C. Liptak at AFRL for assistance with the Raman measurements.

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Correspondence to Weijie Lu.

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Lu, W., Mitchel, W., Boeckl, J. et al. Growth of Graphene-Like Structures on an Oxidized SiC Surface. J. Electron. Mater. 38, 731–736 (2009). https://doi.org/10.1007/s11664-009-0715-5

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  • DOI: https://doi.org/10.1007/s11664-009-0715-5

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