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Mitigative Tin Whisker Growth Under Mechanically Applied Tensile Stress

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Sn whisker/hillock growth is a result of the release of compressive stress in a Sn thin film. Filamentary Sn whiskers were formed on an electrodeposited Sn thin film aged at room temperature, while Sn hillocks were formed as the aging temperature was raised to 80°C and 150°C. By mechanically applying a tensile stress on the Sn thin film, the growth of the Sn whisker/hillock was significantly mitigated. This mitigation growth suggests that part of the compressive stress in the Sn thin film was neutralized by the mechanically applied tensile stress.

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Acknowledgements

The authors gratefully acknowledge the financial support of the National Science Council of Taiwan under Grants NSC 96-2221-E-005-064-MY3 and NSC 96-2218-E-007-012. This work is supported in part by the Ministry of Education, Taiwan, ROC under the ATU plan.

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  1. Department of Chemical Engineering, National Chung-Hsing University, Taichung, 402, Taiwan, ROC

    Yu-jen Chen & Chih-ming Chen

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  1. Yu-jen Chen
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  2. Chih-ming Chen
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Correspondence to Chih-ming Chen.

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Chen, Yj., Chen, Cm. Mitigative Tin Whisker Growth Under Mechanically Applied Tensile Stress. J. Electron. Mater. 38, 415–419 (2009). https://doi.org/10.1007/s11664-008-0619-9

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  • DOI: https://doi.org/10.1007/s11664-008-0619-9

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