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Ionic Electrodeposition Simulation of CdTe Thin Films

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A modified Engelken’s kinetic model, which is based on the Butler–Volmer equation, was developed and simulated to predict the potential at which perfect stoichiometry is achieved in linear-sweep voltammetry. The simulation results were verified experimentally using electrodeposition and the following were determined: the exact potential at which intrinsic CdTe with perfect stoichiometry can be electrodeposited and the deviation from stoichiometry, which can be controlled accurately by adjustment of the electrodeposition potential. Moreover, we found that native nondegenerate p-CdTe and n-CdTe could also be deposited. In this research, the simulation parameters for Engelken’s model were established and corrected. Good agreement was found between the theoretical and experimental results, and accurate compound compositions were predicted.

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Acknowledgements

The authors would like to thank the National Science Council of Taiwan for financially supporting this research under Contracts NSC 96-2628-E-224-008-MY3 and NSC 97-2221-E-224-058-MY3.

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Authors and Affiliations

  1. Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan

    Herng-Yih Ueng & Shu-Ying Yang

  2. Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin, Taiwan

    Jung-Chuan Chou

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  1. Herng-Yih Ueng
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  2. Shu-Ying Yang
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Correspondence to Shu-Ying Yang.

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Ueng, HY., Yang, SY. & Chou, JC. Ionic Electrodeposition Simulation of CdTe Thin Films. J. Electron. Mater. 37, 1821–1827 (2008). https://doi.org/10.1007/s11664-008-0549-6

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  • DOI: https://doi.org/10.1007/s11664-008-0549-6

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