Abstract
Arrays of 100-μm-wide GaInAsSb/AlGaAsSb laser diode emitters with a fill factor of 30% have been fabricated. Suppression of lateral lasing was achieved by the incorporation of grooves between the emitters. A quasi-continuous wave (CW) (30 μs, 300 Hz) output power of 16.7 W from a 4-mm-long laser bar has been demonstrated.
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This material is based upon work supported by the United States Air Force under Contracts FA955005C0043 and FA95500410372, and by the New York State office of Science, Technology, and Academic Research (NYSTAR) under Contract No. C020000.
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Donetsky, D., Chen, J., Shterengas, L. et al. 2.3-μm High-Power Type I Quantum-Well GaInAsSb/AlGaAsSb/GaSb Laser Diode Arrays with Increased Fill Factor. J. Electron. Mater. 37, 1770–1773 (2008). https://doi.org/10.1007/s11664-008-0495-3
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DOI: https://doi.org/10.1007/s11664-008-0495-3