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Journal of Electronic Materials

, Volume 37, Issue 9, pp 1497–1503 | Cite as

Epitaxial Lead Chalcogenides on Si for Mid-IR Detectors and Emitters Including Cavities

  • H. Zogg
  • M. Arnold
  • F. Felder
  • M. Rahim
  • C. Ebneter
  • I. Zasavitskiy
  • N. Quack
  • S. Blunier
  • J. Dual
Article

Lead chalcogenide (IV–VI narrow-gap semiconductor) layers on Si or BaF2(111) substrates are employed to realize two mid-infrared optoelectronic devices for the first time. A tunable resonant cavity enhanced detector is realized by employing a movable mirror. Tuning is across the 4 μm to 5.5 μm wavelength range, and linewidth is <0.1 μm. Due to the thin (0.3 μm) PbTe photodiode inside the cavity, a higher sensitivity at higher operating temperatures was achieved as compared to conventional thick photodiodes. The second device is an optically pumped vertical external-cavity surface-emitting laser with PbTe-based gain layers. It emits at ∼5 μm wavelength and with output power up to 50 mW pulsed, or 3 mW continuous wave at 100 K.

Keywords

Mid-infrared optoelectronic devices VECSEL RCED lead chalcogenides epitaxy 

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Copyright information

© TMS 2008

Authors and Affiliations

  • H. Zogg
    • 1
  • M. Arnold
    • 1
  • F. Felder
    • 1
  • M. Rahim
    • 1
  • C. Ebneter
    • 1
  • I. Zasavitskiy
    • 2
  • N. Quack
    • 3
  • S. Blunier
    • 3
  • J. Dual
    • 3
  1. 1.Thin Film Physics GroupETH ZurichZurichSwitzerland
  2. 2.P.N. Lebedev Physical InstituteRussian Academy of SciencesMoscowRussia
  3. 3.Institute of Mechanical SystemsETH ZurichZurichSwitzerland

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