Epitaxial Lead Chalcogenides on Si for Mid-IR Detectors and Emitters Including Cavities
- 55 Downloads
Lead chalcogenide (IV–VI narrow-gap semiconductor) layers on Si or BaF2(111) substrates are employed to realize two mid-infrared optoelectronic devices for the first time. A tunable resonant cavity enhanced detector is realized by employing a movable mirror. Tuning is across the 4 μm to 5.5 μm wavelength range, and linewidth is <0.1 μm. Due to the thin (0.3 μm) PbTe photodiode inside the cavity, a higher sensitivity at higher operating temperatures was achieved as compared to conventional thick photodiodes. The second device is an optically pumped vertical external-cavity surface-emitting laser with PbTe-based gain layers. It emits at ∼5 μm wavelength and with output power up to 50 mW pulsed, or 3 mW continuous wave at 100 K.
KeywordsMid-infrared optoelectronic devices VECSEL RCED lead chalcogenides epitaxy
Unable to display preview. Download preview PDF.
- 1.A. Rogalski, K. Adamiec, J. Rutkowski, Narrow Gap Semiconductor Photodiodes, SPIE press, Bellingham, WA, (2000)Google Scholar
- 6.W. Heiss, T. Schwarzl, and G. Springholz, Proc. 9th Int. Conf. on Narrow Gap Semiconductors, Berlin, ed. N. Puhlmann, H.-U. Müller, and M. von Ortenberg, 1999, p. 61Google Scholar
- 11.N. Quack, S. Blunier, J. Dual, M. Arnold, F. Felder, C. Ebneter, M. Rahim, and H. Zogg, Sensor Actuat. A Phys. 143, 29–33 (2008)Google Scholar
- 12.N. Quack, S. Blunier, J. Dual, M. Arnold, F. Felder, C. Ebneter, M. Rahim, and H. Zogg, J. Opt. A: Pure Appl. Opt. 10, 044015 (2008)Google Scholar