Abstract
Fabrication of germanium-on-insulator (GeOI) substrates with a 160-nm-thick Ge layer is reported. Such thick GeOI substrates were fabricated by thermal intermixing and subsequent condensation of epitaxially grown high-Ge- content SiGe on Si-on-insulator (SOI) substrates. Transmission electron microscopy revealed that the GeOI layer was single crystalline. The high-resolution rocking curve and reciprocal lattice map obtained from X-ray diffraction measurements showed a relaxed GeOI. This was further confirmed by micro-Raman measurements, where the Ge-Ge optical phonon peak shift represented a nearly strain-free Ge layer. Using this methodology, GeOI substrates with Ge layers 120–160 nm thick have been fabricated with thickness variations of less than 4 nm across 200 mm wafers.
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Balakumar, S., Hoe, K., Lo, G. et al. Fabrication of Thick Germanium-on-Insulator (GeOI) Substrates. J. Electron. Mater. 37, 944–950 (2008). https://doi.org/10.1007/s11664-008-0413-8
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DOI: https://doi.org/10.1007/s11664-008-0413-8