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Ambient Temperature Ultrasonic Bonding of Si-Dice Using Sn-3.5wt.%Ag

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An Erratum to this article was published on 28 May 2008

Abstract

Ultrasonic bonding of Si-dice to type FR-4 printed circuit boards (PCB) with Sn-3.5wt.%Ag solder at ambient temperature was investigated. The under-bump metallization (UBM) on the Si-dice comprised Cu/Ni/Al from top to bottom with thicknesses of 0.4 μm, 0.4 μm, and 0.3 μm, respectively. The pads on the PCBs consisted of Au/Ni/Cu with thicknesses of 0.05/5/18 μm, sequentially from top to bottom. Solder was supplied as Sn-3.5wt.%Ag foil rolled to 100 μm thickness, and inserted in the joints. The ultrasonic bonding time was varied from 0.5 s to 3.0 s, and the ultrasonic power was 1400 W. The experimental results showed that reliable joints could be produced between the Si-dice and the PCBs with Sn-3.5wt.%Ag solder. The joint breaking force of “Si-die/solder/FR-4” increased with bonding times up to 2.5 s with a maximum value of 65 N. A bonding time of 3.0 s proved to be excessive, and resulted in cracks along the intermetallic compound between the UBM and solder, which caused a decrease in the bond strength. The intermetallic compound produced by ultrasonic bonding between the UBM and solder was confirmed to be (Cu, Ni)6Sn5.

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Author notes

  1. Jung-Mo Kim

    Present address: Department of Mech. Eng., University of Waterloo, Waterloo, Canada, N2L 3G1

Authors and Affiliations

  1. University of Seoul, Seoul, Republic of Korea

    Jung-Mo Kim

  2. Department of Mech. Eng., University of Waterloo, Waterloo, Canada, N2L 3G1

    Y. Norman Zhou

  3. Department of Mater. Sci. and Eng., University of Seoul, Seoul, 130-743, Republic of Korea

    Jae-Pil Jung

  4. Seoul Nat’l University of Technology, Seoul, 139-743, Republic of Korea

    Jong-Young Kim

Authors
  1. Jung-Mo Kim
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  2. Jae-Pil Jung
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  3. Y. Norman Zhou
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  4. Jong-Young Kim
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Correspondence to Jae-Pil Jung.

Additional information

An erratum to this article can be found at http://dx.doi.org/10.1007/s11664-008-0488-2

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Kim, JM., Jung, JP., Zhou, Y.N. et al. Ambient Temperature Ultrasonic Bonding of Si-Dice Using Sn-3.5wt.%Ag. J. Electron. Mater. 37, 324–330 (2008). https://doi.org/10.1007/s11664-007-0341-z

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